A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper

Chao Min Chang, Pei Chin Chiu, Jeng Han Tsai, Hui Hsin Sun, Yun Yue Hsieh, Zhi Jie Zeng, Kun Lin Lu, Chih Peng Lin, Bo Chin Wang, Sheng Chun Wang, Chin Fu Lin

Research output: Contribution to conferencePaper

Abstract

In this paper, we report a 0.15 μm pHEMT process whose gate is defined by DUV stepper. Compared with traditionally used e-beam writer, this technology features high throughput and low cost which is suitable for production of commercial MMICs (Monolithic microwave integrated circuit), especially for future 5G mm-Wave applications. After process optimization, excellent device performances such as, Pout (output power) of 553 mW/mm, Gain of 11 dB and PAE (power added efficiency) of 50% were achieved at 30 GHz. A consistent CP (chip probing) yield > 98% was achieved with a very tight control of gate process at Wavetech.

Original languageEnglish
Publication statusPublished - 2019 Jan 1
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: 2019 Apr 292019 May 2

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
CountryUnited States
CityMinneapolis
Period19/4/2919/5/2

Keywords

  • 0.15μm
  • DUV volume production
  • Yield

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Chang, C. M., Chiu, P. C., Tsai, J. H., Sun, H. H., Hsieh, Y. Y., Zeng, Z. J., Lu, K. L., Lin, C. P., Wang, B. C., Wang, S. C., & Lin, C. F. (2019). A high uniformity, high yield 0.15 μm pHEMT technology manufactured by KrF 248 nm stepper. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.