A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications

Kai Jie Chuang; Wei Ting Bai; Yu Chun Chen; Wen Jie Lin; Jeng Han Tsai; Tian Wei Huang

doi:10.1109/RFIT52905.2021.9565301

A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications

Kai Jie Chuang, Wei Ting Bai, Yu Chun Chen, Wen Jie Lin, Jeng Han Tsai, Tian Wei Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth.

Original language	English
Title of host publication	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565301
Publication status	Published - 2021 Aug 25
Event	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan Duration: 2021 Aug 25 → 2021 Aug 27

Publication series

Name	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/Territory	Taiwan
City	Hualien
Period	2021/08/25 → 2021/08/27

Keywords

gain enhancement
layout
millimeter wave (MMW))
power amplifier

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/RFIT52905.2021.9565301

Cite this

Chuang, K. J., Bai, W. T., Chen, Y. C., Lin, W. J., Tsai, J. H., & Huang, T. W. (2021). A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT52905.2021.9565301

A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications. / Chuang, Kai Jie; Bai, Wei Ting; Chen, Yu Chun et al.
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chuang, KJ, Bai, WT, Chen, YC, Lin, WJ, Tsai, JH & Huang, TW 2021, A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications. in 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 2021/08/25. https://doi.org/10.1109/RFIT52905.2021.9565301

Chuang KJ, Bai WT, Chen YC, Lin WJ, Tsai JH, Huang TW. A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). doi: 10.1109/RFIT52905.2021.9565301

Chuang, Kai Jie ; Bai, Wei Ting ; Chen, Yu Chun et al. / A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

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title = "A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications",

abstract = "This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth.",

keywords = "gain enhancement, layout, millimeter wave (MMW)), power amplifier",

author = "Chuang, {Kai Jie} and Bai, {Wei Ting} and Chen, {Yu Chun} and Lin, {Wen Jie} and Tsai, {Jeng Han} and Huang, {Tian Wei}",

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AB - This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth.

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A Gain Enhancement Structure Using 28-nm CMOS Process for V-band Power Amplifier Applications

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

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