A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng

doi:10.1109/LED.2013.2258455

A flexible IGZO thin-film transistor with stacked TiO₂-based dielectrics fabricated at room temperature

Hsiao Hsuan Hsu
, Chun Yen Chang
, Chun Hu Cheng

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

113 Citations (Scopus)

Abstract

This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO₂/TiO₂/SiO ₂ (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm²/Vs, and good I_ON/I _OFF ratio of 6.7× 10⁵, which have the potential for the application of high-resolution flexible display.

Original language	English
Article number	6515620
Pages (from-to)	768-770
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/LED.2013.2258455
Publication status	Published - 2013

Keywords

High-κ
TiO
indium-gallium-zinc oxide (IGZO)
thin-film transistor (TFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2013.2258455

Cite this

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title = "A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature",

abstract = "This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.",

keywords = "High-κ, TiO, indium-gallium-zinc oxide (IGZO), thin-film transistor (TFT)",

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AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

PY - 2013

Y1 - 2013

N2 - This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.

AB - This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.

KW - High-κ

KW - TiO

KW - indium-gallium-zinc oxide (IGZO)

KW - thin-film transistor (TFT)

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