This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.
- indium-gallium-zinc oxide (IGZO)
- thin-film transistor (TFT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering