A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

This letter demonstrates the feasibility of full room temperature InGaZnO thin-film transistor (TFT) using trilayer gate dielectric on flexible substrate. Through integrating high-κ SiO2/TiO2/SiO 2 (STS) gate-stack as well as InGaZnO channel thickness modulation, the resulting flexible indium-gallium-zinc oxide (IGZO)/STS TFTs show low threshold voltage of 0.5 V, small subthreshold swing of 0.129 V/decade, high field effect mobility of 76 cm2/Vs, and good ION/I OFF ratio of 6.7× 105, which have the potential for the application of high-resolution flexible display.

Original languageEnglish
Article number6515620
Pages (from-to)768-770
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number6
DOIs
Publication statusPublished - 2013 Jun 3

Fingerprint

Flexible displays
Zinc Oxide
Gallium
Indium
Gate dielectrics
Thin film transistors
Zinc oxide
Threshold voltage
Oxide films
Modulation
Substrates
Temperature
TiO2-SiO2

Keywords

  • High-κ
  • TiO
  • indium-gallium-zinc oxide (IGZO)
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A flexible IGZO thin-film transistor with stacked TiO2-based dielectrics fabricated at room temperature. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun-Hu.

In: IEEE Electron Device Letters, Vol. 34, No. 6, 6515620, 03.06.2013, p. 768-770.

Research output: Contribution to journalArticle

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