Abstract
We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H2S on a Ge(100) surface. There are four reaction paths proposed for the decomposition of adsorbed H2S on a Ge(100) surface and the corresponding structural conformations are studied extensively. The present study shows two new possible products and a detailed reaction mechanism for H2S adsorption on a Ge(100) surface and the results are compared with our previous study of H2S adsorption on a Si(100) surface (J. Phy. Chem. C, 115, 2011, 19203). The density of states (DOS) and electron density difference (EDD) analyses are used to illustrate the interaction between S-containing species and surface Ge atoms.
Original language | English |
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Pages (from-to) | 3825-3832 |
Number of pages | 8 |
Journal | RSC Advances |
Volume | 5 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2015 |
ASJC Scopus subject areas
- Chemistry(all)
- Chemical Engineering(all)