A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator Nanowire

Shu-Fen Hu, Yung Chun Wu, Chin Lung Sung, Chun Yen Chang, Tiao Yuan Huang

Research output: Contribution to journalArticle

18 Citations (Scopus)


A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation, and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K.

Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalIEEE Transactions on Nanotechnology
Issue number1 SPEC. ISS.
Publication statusPublished - 2004 Mar 1



  • NanotechnoJogy
  • Quantum dots (QD)
  • Quantum wires
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this