A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator Nanowire

Shu-Fen Hu, Yung Chun Wu, Chin Lung Sung, Chun Yen Chang, Tiao Yuan Huang

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturized to smaller than the state-of-the-art feature size, through a combination of electron beam lithography, oxidation, and polysilicon sidewall spacer gate formation processes. The device shows typical MOSFET I-V characteristics at room temperature. However, the Coulomb gap and Coulomb oscillations are clearly observed at 4 K.

Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume3
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - 2004 Mar 1

Fingerprint

Single electron transistors
Polysilicon
Nanowires
Electric field effects
Silicon
Electron beam lithography
Semiconductor quantum dots
Oxidation
Temperature

Keywords

  • NanotechnoJogy
  • Quantum dots (QD)
  • Quantum wires
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator Nanowire. / Hu, Shu-Fen; Wu, Yung Chun; Sung, Chin Lung; Chang, Chun Yen; Huang, Tiao Yuan.

In: IEEE Transactions on Nanotechnology, Vol. 3, No. 1 SPEC. ISS., 01.03.2004, p. 93-97.

Research output: Contribution to journalArticle

Hu, Shu-Fen ; Wu, Yung Chun ; Sung, Chin Lung ; Chang, Chun Yen ; Huang, Tiao Yuan. / A Dual-Gate-Controlled Single-Electron Transistor Using Self-Aligned Polysilicon Sidewall Spacer Gates on Silicon-on-Insulator Nanowire. In: IEEE Transactions on Nanotechnology. 2004 ; Vol. 3, No. 1 SPEC. ISS. pp. 93-97.
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