A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin; Po Shun Huang; Jen Hao Cheng; Jeng Han Tsai; Hamed Alsuraisry; Tian Wei Huang

doi:10.1002/mop.31220

A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin^*, Po Shun Huang, Jen Hao Cheng, Jeng Han Tsai, Hamed Alsuraisry, Tian Wei Huang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, P_sat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm². This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm²) with other state-of-the-art class-E PAs at higher frequency.

Original language	English
Pages (from-to)	1672-1675
Number of pages	4
Journal	Microwave and Optical Technology Letters
Volume	60
Issue number	7
DOIs	https://doi.org/10.1002/mop.31220
Publication status	Published - 2018 Jul

Keywords

class-E
CMOS
concurrent
dual-band
impedance matching network
power amplifier (PA)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1002/mop.31220

Cite this

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title = "A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS",

abstract = "In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.",

keywords = "class-E, CMOS, concurrent, dual-band, impedance matching network, power amplifier (PA)",

author = "Lin, {Wen Jie} and Huang, {Po Shun} and Cheng, {Jen Hao} and Tsai, {Jeng Han} and Hamed Alsuraisry and Huang, {Tian Wei}",

note = "Funding Information: Ministry of Science and Technology (MOST), Grant/Award Number: MOST 103-2221-E-002-053, MOST 103-2221-E-002-051, MOST103-2218-E-002-031, Contract NSC 102-2221-E-002-038-MY3, 102R8908, and 104R890834 Publisher Copyright: {\textcopyright} 2018 Wiley Periodicals, Inc.",

year = "2018",

month = jul,

doi = "10.1002/mop.31220",

language = "English",

volume = "60",

pages = "1672--1675",

journal = "Microwave and Optical Technology Letters",

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T1 - A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

AU - Lin, Wen Jie

AU - Huang, Po Shun

AU - Cheng, Jen Hao

AU - Tsai, Jeng Han

AU - Alsuraisry, Hamed

AU - Huang, Tian Wei

N1 - Funding Information: Ministry of Science and Technology (MOST), Grant/Award Number: MOST 103-2221-E-002-053, MOST 103-2221-E-002-051, MOST103-2218-E-002-031, Contract NSC 102-2221-E-002-038-MY3, 102R8908, and 104R890834 Publisher Copyright: © 2018 Wiley Periodicals, Inc.

PY - 2018/7

Y1 - 2018/7

N2 - In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

AB - In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

KW - class-E

KW - CMOS

KW - concurrent

KW - dual-band

KW - impedance matching network

KW - power amplifier (PA)

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JF - Microwave and Optical Technology Letters

IS - 7

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A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

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Keywords

ASJC Scopus subject areas

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