Abstract
In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.
Original language | English |
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Pages (from-to) | 1672-1675 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 60 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2018 Jul |
Keywords
- CMOS
- class-E
- concurrent
- dual-band
- impedance matching network
- power amplifier (PA)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering