A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin, Po Shun Huang, Jen Hao Cheng, Jeng-Han Tsai, Hamed Alsuraisry, Tian Wei Huang

Research output: Contribution to journalArticle

Abstract

In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

LanguageEnglish
Pages1672-1675
Number of pages4
JournalMicrowave and Optical Technology Letters
Volume60
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1

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power amplifiers
Power amplifiers
CMOS
chips
power gain
impedance matching
power efficiency

Keywords

  • class-E
  • CMOS
  • concurrent
  • dual-band
  • impedance matching network
  • power amplifier (PA)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS. / Lin, Wen Jie; Huang, Po Shun; Cheng, Jen Hao; Tsai, Jeng-Han; Alsuraisry, Hamed; Huang, Tian Wei.

In: Microwave and Optical Technology Letters, Vol. 60, No. 7, 01.07.2018, p. 1672-1675.

Research output: Contribution to journalArticle

Lin, Wen Jie ; Huang, Po Shun ; Cheng, Jen Hao ; Tsai, Jeng-Han ; Alsuraisry, Hamed ; Huang, Tian Wei. / A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS. In: Microwave and Optical Technology Letters. 2018 ; Vol. 60, No. 7. pp. 1672-1675.
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