A dual-band class-E power amplifier with concurrent matching network in 0.18-μm CMOS

Wen Jie Lin, Po Shun Huang, Jen Hao Cheng, Jeng Han Tsai, Hamed Alsuraisry, Tian Wei Huang

Research output: Contribution to journalArticle


In this letter, a dual-band class-E CMOS power amplifier (PA) in 0.18-μm CMOS process is presented. By using concurrent dual-band impedance matching network, the proposed dual-band PA can achieve high efficiency in a compact chip area. This dual-band class-E PA demonstrates the power gain ≥ 8.4 dB, Psat ≥ 21.4 dBm with power added efficiency ≥ 31% in a compact chip size of 0.5 mm2. This dual-band class-E PA achieves comparable power area density of 284.5 (mW/mm2) with other state-of-the-art class-E PAs at higher frequency.

Original languageEnglish
Pages (from-to)1672-1675
Number of pages4
JournalMicrowave and Optical Technology Letters
Issue number7
Publication statusPublished - 2018 Jul



  • CMOS
  • class-E
  • concurrent
  • dual-band
  • impedance matching network
  • power amplifier (PA)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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