A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks

Yu Te Chang; Jeng Han Tsai

doi:10.1109/IMSRFTT43070.2026.11602470

A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks

Yu Te Chang
, Jeng Han Tsai

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work presents a wideband D-band low-noise amplifier (LNA) realized in a 40-nm bulk CMOS technology. A five-stage differential common-source architecture is employed to achieve high gain and low noise figure (NF). Broadband interstage matching is accomplished using doubly-tuned transformer networks. The proposed LNA delivers a peak gain of 22.3 dB at 139.5 GHz and achieves a minimum NF of 6.2 dB at 123 GHz. The LNA provides a 3-dB bandwidth spanning from 118.6 - 155.9 GHz, corresponding to a fractional bandwidth (FBW) of 27.2%, which is the widest bandwidth among recently reported D-band CMOS LNAs. The design consumes 61.5 mW dc power, exhibits an input 1-dB gain compression point (IP_1dB) of -27 dBm, and occupies an area of 0.636

Original language	English
Title of host publication	2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	339-342
Number of pages	4
ISBN (Electronic)	9798331547660
DOIs	https://doi.org/10.1109/IMSRFTT43070.2026.11602470
Publication status	Published - 2026
Event	2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026 - Boston, United States Duration: 2026 Jun 8 → 2026 Jun 11

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Conference

Conference	2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026
Country/Territory	United States
City	Boston
Period	2026/06/08 → 2026/06/11

Keywords

CMOS
D-band
low-noise amplifier (LNA)
transformers
wideband

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/IMSRFTT43070.2026.11602470

Cite this

Chang, Y. T., & Tsai, J. H. (2026). A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks. In 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026 (pp. 339-342). (IEEE MTT-S International Microwave Symposium Digest). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMSRFTT43070.2026.11602470

A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks. / Chang, Yu Te; Tsai, Jeng Han.
2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026. Institute of Electrical and Electronics Engineers Inc., 2026. p. 339-342 (IEEE MTT-S International Microwave Symposium Digest).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chang, YT & Tsai, JH 2026, A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks. in 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026. IEEE MTT-S International Microwave Symposium Digest, Institute of Electrical and Electronics Engineers Inc., pp. 339-342, 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026, Boston, United States, 2026/06/08. https://doi.org/10.1109/IMSRFTT43070.2026.11602470

Chang YT, Tsai JH. A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks. In 2026 IEEE MTT-S Radio Frequency Technology and Techniques Symposium, IMS RFTT 2026. Institute of Electrical and Electronics Engineers Inc. 2026. p. 339-342. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/IMSRFTT43070.2026.11602470

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abstract = "This work presents a wideband D-band low-noise amplifier (LNA) realized in a 40-nm bulk CMOS technology. A five-stage differential common-source architecture is employed to achieve high gain and low noise figure (NF). Broadband interstage matching is accomplished using doubly-tuned transformer networks. The proposed LNA delivers a peak gain of 22.3 dB at 139.5 GHz and achieves a minimum NF of 6.2 dB at 123 GHz. The LNA provides a 3-dB bandwidth spanning from 118.6 - 155.9 GHz, corresponding to a fractional bandwidth (FBW) of 27.2\%, which is the widest bandwidth among recently reported D-band CMOS LNAs. The design consumes 61.5 mW dc power, exhibits an input 1-dB gain compression point (IP1dB) of -27 dBm, and occupies an area of 0.636",

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AB - This work presents a wideband D-band low-noise amplifier (LNA) realized in a 40-nm bulk CMOS technology. A five-stage differential common-source architecture is employed to achieve high gain and low noise figure (NF). Broadband interstage matching is accomplished using doubly-tuned transformer networks. The proposed LNA delivers a peak gain of 22.3 dB at 139.5 GHz and achieves a minimum NF of 6.2 dB at 123 GHz. The LNA provides a 3-dB bandwidth spanning from 118.6 - 155.9 GHz, corresponding to a fractional bandwidth (FBW) of 27.2%, which is the widest bandwidth among recently reported D-band CMOS LNAs. The design consumes 61.5 mW dc power, exhibits an input 1-dB gain compression point (IP1dB) of -27 dBm, and occupies an area of 0.636

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A D-Band Wideband Low-Noise Amplifier in 40-nm Bulk CMOS Technology with Doubly-Tuned Transformer Networks

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