A comprehensive study of inversion current in MOS tunneling diodes

C. H. Lin, B. C. Hsu, Min-Hung Lee, C. W. Liu

    Research output: Contribution to journalArticle

    31 Citations (Scopus)

    Abstract

    The gate current of MOS tunneling diodes biased at inversion region with different substrate doping is investigated. For p-type substrate (1-5 Ω-cm) devices, the tunneling diode works in the deep depletion region and the inversion current is dominated by the thermal generation rate of minority electrons via traps at Si/SiO 2 interface and in the deep depletion region. The activation energy is approximately equal to half of the silicon bandgap independent of gate voltage. For devices on p + substrate (0.01-0.05 Ω-cm), the band-to-traps tunneling and band-to-band tunneling are the dominating current components at inversion bias, and reveal a strong field dependence and a weak temperature dependence. The band-to-traps and band-to-band current components are even more significant in the devices on the p ++ substrate (0.001-0.0025 Ω-cm). Finally, the effects of temperature and light illumination on inversion current of MOS tunneling diodes will be also discussed.

    Original languageEnglish
    Pages (from-to)2125-2130
    Number of pages6
    JournalIEEE Transactions on Electron Devices
    Volume48
    Issue number9
    DOIs
    Publication statusPublished - 2001 Sep 1

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    Diodes
    Substrates
    Silicon
    Energy gap
    Activation energy
    Lighting
    Doping (additives)
    Temperature
    Electrons
    Electric potential

    Keywords

    • Inversion current
    • MOS tunneling diode
    • Ultra-thin oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    A comprehensive study of inversion current in MOS tunneling diodes. / Lin, C. H.; Hsu, B. C.; Lee, Min-Hung; Liu, C. W.

    In: IEEE Transactions on Electron Devices, Vol. 48, No. 9, 01.09.2001, p. 2125-2130.

    Research output: Contribution to journalArticle

    Lin, C. H. ; Hsu, B. C. ; Lee, Min-Hung ; Liu, C. W. / A comprehensive study of inversion current in MOS tunneling diodes. In: IEEE Transactions on Electron Devices. 2001 ; Vol. 48, No. 9. pp. 2125-2130.
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