A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

Tsung Ming Lee; Chien Liang Lin; Yu Chi Fan; Sheng Lee; Wei Dong Liu; Hsiu Ming Liu; Zi You Huang; Zhi Wei Zheng; Shih An Wang; Chun Hu Cheng; Hsiao Hsuan Hsu

doi:10.1016/j.tsf.2020.137927

A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

Tsung Ming Lee, Chien Liang Lin, Yu Chi Fan, Sheng Lee, Wei Dong Liu, Hsiu Ming Liu, Zi You Huang, Zhi Wei Zheng, Shih An Wang, Chun Hu Cheng, Hsiao Hsuan Hsu^*

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600–800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement.

Original language	English
Article number	137927
Journal	Thin Solid Films
Volume	701
DOIs	https://doi.org/10.1016/j.tsf.2020.137927
Publication status	Published - 2020 May 1

Keywords

Ferroelectric
Hafnium zirconium oxide
Hysteresis loop
Polarization current

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2020.137927

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@article{d6ff9e61df5e4dab933ff2b5b2122fbc,

title = "A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides",

abstract = "To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600–800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement.",

keywords = "Ferroelectric, Hafnium zirconium oxide, Hysteresis loop, Polarization current",

author = "Lee, {Tsung Ming} and Lin, {Chien Liang} and Fan, {Yu Chi} and Sheng Lee and Liu, {Wei Dong} and Liu, {Hsiu Ming} and Huang, {Zi You} and Zheng, {Zhi Wei} and Wang, {Shih An} and Cheng, {Chun Hu} and Hsu, {Hsiao Hsuan}",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = may,

day = "1",

doi = "10.1016/j.tsf.2020.137927",

language = "English",

volume = "701",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

AU - Lee, Tsung Ming

AU - Lin, Chien Liang

AU - Fan, Yu Chi

AU - Lee, Sheng

AU - Liu, Wei Dong

AU - Liu, Hsiu Ming

AU - Huang, Zi You

AU - Zheng, Zhi Wei

AU - Wang, Shih An

AU - Cheng, Chun Hu

AU - Hsu, Hsiao Hsuan

PY - 2020/5/1

Y1 - 2020/5/1

N2 - To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600–800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement.

AB - To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600–800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement.

KW - Ferroelectric

KW - Hafnium zirconium oxide

KW - Hysteresis loop

KW - Polarization current

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DO - 10.1016/j.tsf.2020.137927

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SN - 0040-6090

VL - 701

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 137927

ER -

A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

Abstract

Keywords

ASJC Scopus subject areas

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