A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides

Tsung Ming Lee, Chien Liang Lin, Yu Chi Fan, Sheng Lee, Wei Dong Liu, Hsiu Ming Liu, Zi You Huang, Zhi Wei Zheng, Shih An Wang, Chun Hu Cheng, Hsiao Hsuan Hsu

Research output: Contribution to journalArticle

Abstract

To understand the effect of deposition sequence of ferroelectric HfZrO, we investigated the ferroelectric polarization characteristics of a 50%-zirconium-doped HfZrO and a stacked HfZrO metal-ferroelectric-metal capacitors. Based on experimental results, we find that the leakage current can be effectively suppressed in stacked HfZrO film. The film stack structure is favorable for simultaneously stabilizing the ferroelectric polarization and minimizing the generation of interface defect traps during the post-metal annealing process with a thermal budget of 600–800 °C, which is favorable for complementary-metal-oxide-semiconductor frond- and back-end process integration with various thermal budget requirement.

Original languageEnglish
Article number137927
JournalThin Solid Films
Volume701
DOIs
Publication statusPublished - 2020 May 1

Keywords

  • Ferroelectric
  • Hafnium zirconium oxide
  • Hysteresis loop
  • Polarization current

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Lee, T. M., Lin, C. L., Fan, Y. C., Lee, S., Liu, W. D., Liu, H. M., Huang, Z. Y., Zheng, Z. W., Wang, S. A., Cheng, C. H., & Hsu, H. H. (2020). A comparative study of metal-ferroelectric-metal devices using doped- and stacked-hafnium zirconium oxides. Thin Solid Films, 701, [137927]. https://doi.org/10.1016/j.tsf.2020.137927