A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology

Min Huang, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In this paper, an ultra-low-power and low-noise amplifier is presented for 90-nm CMOS RF frontends. By employing current-reused, and forward-body-bias techniques, a low-noise amplifier (LNA) can operate at a reduced supply voltage with micro-watt dc power consumption while maintaining reasonable gain performance at millimeter-wave frequencies. To reduce noise factor and bias current simultaneously, transformer feedback technique is selected to make compromise between noise figure and input matching. From the measurement results, the LNA exhibits a gain of 10.6 dB and noise figure of 5.4 dB at 40.2 GHz. Operated at a supply voltage of L.0 V, the dc power consumption of the LNA is 917 μW.

Original languageEnglish
Title of host publicationIMS 2012 - 2012 IEEE MTT-S International Microwave Symposium
DOIs
Publication statusPublished - 2012
Event2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada
Duration: 2012 Jun 172012 Jun 22

Other

Other2012 IEEE MTT-S International Microwave Symposium, IMS 2012
CountryCanada
CityMontreal, QC
Period12/6/1712/6/22

Fingerprint

Low noise amplifiers
transformers
low noise
CMOS
amplifiers
Feedback
Noise figure
Electric power utilization
Electric instrument transformers
Bias currents
Electric potential
electric potential
Millimeter waves
millimeter waves

Keywords

  • Current-reused
  • Forward-body-bias
  • Low-noise amplifiers (LNAs)
  • RF frontends
  • Transformer-feedback
  • Ultra-low power

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Huang, M., Tsai, J. H., & Huang, T. W. (2012). A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology. In IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium [6258388] https://doi.org/10.1109/MWSYM.2012.6258388

A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology. / Huang, Min; Tsai, Jeng Han; Huang, Tian Wei.

IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium. 2012. 6258388.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, M, Tsai, JH & Huang, TW 2012, A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology. in IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium., 6258388, 2012 IEEE MTT-S International Microwave Symposium, IMS 2012, Montreal, QC, Canada, 12/6/17. https://doi.org/10.1109/MWSYM.2012.6258388
Huang M, Tsai JH, Huang TW. A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology. In IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium. 2012. 6258388 https://doi.org/10.1109/MWSYM.2012.6258388
Huang, Min ; Tsai, Jeng Han ; Huang, Tian Wei. / A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology. IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium. 2012.
@inproceedings{91048870d55a4ddfb031da507a2c1960,
title = "A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology",
abstract = "In this paper, an ultra-low-power and low-noise amplifier is presented for 90-nm CMOS RF frontends. By employing current-reused, and forward-body-bias techniques, a low-noise amplifier (LNA) can operate at a reduced supply voltage with micro-watt dc power consumption while maintaining reasonable gain performance at millimeter-wave frequencies. To reduce noise factor and bias current simultaneously, transformer feedback technique is selected to make compromise between noise figure and input matching. From the measurement results, the LNA exhibits a gain of 10.6 dB and noise figure of 5.4 dB at 40.2 GHz. Operated at a supply voltage of L.0 V, the dc power consumption of the LNA is 917 μW.",
keywords = "Current-reused, Forward-body-bias, Low-noise amplifiers (LNAs), RF frontends, Transformer-feedback, Ultra-low power",
author = "Min Huang and Tsai, {Jeng Han} and Huang, {Tian Wei}",
year = "2012",
doi = "10.1109/MWSYM.2012.6258388",
language = "English",
isbn = "9781467310871",
booktitle = "IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium",

}

TY - GEN

T1 - A 917-μW Q-band transformer-feedback current-reused LNA using 90-nm CMOS technology

AU - Huang, Min

AU - Tsai, Jeng Han

AU - Huang, Tian Wei

PY - 2012

Y1 - 2012

N2 - In this paper, an ultra-low-power and low-noise amplifier is presented for 90-nm CMOS RF frontends. By employing current-reused, and forward-body-bias techniques, a low-noise amplifier (LNA) can operate at a reduced supply voltage with micro-watt dc power consumption while maintaining reasonable gain performance at millimeter-wave frequencies. To reduce noise factor and bias current simultaneously, transformer feedback technique is selected to make compromise between noise figure and input matching. From the measurement results, the LNA exhibits a gain of 10.6 dB and noise figure of 5.4 dB at 40.2 GHz. Operated at a supply voltage of L.0 V, the dc power consumption of the LNA is 917 μW.

AB - In this paper, an ultra-low-power and low-noise amplifier is presented for 90-nm CMOS RF frontends. By employing current-reused, and forward-body-bias techniques, a low-noise amplifier (LNA) can operate at a reduced supply voltage with micro-watt dc power consumption while maintaining reasonable gain performance at millimeter-wave frequencies. To reduce noise factor and bias current simultaneously, transformer feedback technique is selected to make compromise between noise figure and input matching. From the measurement results, the LNA exhibits a gain of 10.6 dB and noise figure of 5.4 dB at 40.2 GHz. Operated at a supply voltage of L.0 V, the dc power consumption of the LNA is 917 μW.

KW - Current-reused

KW - Forward-body-bias

KW - Low-noise amplifiers (LNAs)

KW - RF frontends

KW - Transformer-feedback

KW - Ultra-low power

UR - http://www.scopus.com/inward/record.url?scp=84866781793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866781793&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2012.6258388

DO - 10.1109/MWSYM.2012.6258388

M3 - Conference contribution

AN - SCOPUS:84866781793

SN - 9781467310871

BT - IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium

ER -