A 86 to 108 GHz amplifier in 90 nm CMOS

Yu Sian Jiang; Zuo Min Tsai; Jeng Han Tsai; Hsien Te Chen; Huei Wang

doi:10.1109/LMWC.2007.915132

A 86 to 108 GHz amplifier in 90 nm CMOS

Yu Sian Jiang^*
, Zuo Min Tsai
, Jeng Han Tsai
, Hsien Te Chen
, Huei Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

Original language	English
Pages (from-to)	124-126
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2007.915132
Publication status	Published - 2008 Feb
Externally published	Yes

Keywords

Amplifier
CMOS
Monolithic microwave integrated circuit (MMIC)

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2007.915132

Cite this

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title = "A 86 to 108 GHz amplifier in 90 nm CMOS",

abstract = "This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.",

keywords = "Amplifier, CMOS, Monolithic microwave integrated circuit (MMIC)",

author = "Jiang, \{Yu Sian\} and Tsai, \{Zuo Min\} and Tsai, \{Jeng Han\} and Chen, \{Hsien Te\} and Huei Wang",

note = "Funding Information: Manuscript received May 27, 2007; revised October 22, 2007. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2752-E-002-003-PAE, NSC 95-2219-E-002-006, and NSC 95-2219-E-002-009, and by the Excellent Research Projects of National Taiwan University (95R0062-AE00-00).",

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language = "English",

volume = "18",

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AU - Jiang, Yu Sian

AU - Tsai, Zuo Min

AU - Tsai, Jeng Han

AU - Chen, Hsien Te

AU - Wang, Huei

N1 - Funding Information: Manuscript received May 27, 2007; revised October 22, 2007. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2752-E-002-003-PAE, NSC 95-2219-E-002-006, and NSC 95-2219-E-002-009, and by the Excellent Research Projects of National Taiwan University (95R0062-AE00-00).

PY - 2008/2

Y1 - 2008/2

N2 - This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

AB - This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

KW - Amplifier

KW - CMOS

KW - Monolithic microwave integrated circuit (MMIC)

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JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 2

ER -

A 86 to 108 GHz amplifier in 90 nm CMOS

Abstract

Keywords

ASJC Scopus subject areas

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