A 86 to 108 GHz amplifier in 90 nm CMOS

Yu Sian Jiang*, Zuo Min Tsai, Jeng Han Tsai, Hsien Te Chen, Huei Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

Original languageEnglish
Pages (from-to)124-126
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number2
Publication statusPublished - 2008 Feb
Externally publishedYes


  • Amplifier
  • CMOS
  • Monolithic microwave integrated circuit (MMIC)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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