A 86 to 108 GHz amplifier in 90 nm CMOS

Yu Sian Jiang, Zuo Min Tsai, Jeng-Han Tsai, Hsien Te Chen, Huei Wang

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.

Original languageEnglish
Pages (from-to)124-126
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume18
Issue number2
DOIs
Publication statusPublished - 2008 Feb 1

Fingerprint

CMOS
amplifiers
radio frequencies
Bandwidth
bandwidth
configurations

Keywords

  • Amplifier
  • CMOS
  • Monolithic microwave integrated circuit (MMIC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A 86 to 108 GHz amplifier in 90 nm CMOS. / Jiang, Yu Sian; Tsai, Zuo Min; Tsai, Jeng-Han; Chen, Hsien Te; Wang, Huei.

In: IEEE Microwave and Wireless Components Letters, Vol. 18, No. 2, 01.02.2008, p. 124-126.

Research output: Contribution to journalArticle

Jiang, Yu Sian ; Tsai, Zuo Min ; Tsai, Jeng-Han ; Chen, Hsien Te ; Wang, Huei. / A 86 to 108 GHz amplifier in 90 nm CMOS. In: IEEE Microwave and Wireless Components Letters. 2008 ; Vol. 18, No. 2. pp. 124-126.
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