A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng Han Tsai; Ruei An Chang; Ji Yang Lin

doi:10.1109/SiRF.2014.6828515

A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng Han Tsai, Ruei An Chang, Ji Yang Lin

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (P_sat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum P_sat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP_1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

Original language	English
Title of host publication	SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Publisher	IEEE Computer Society
Pages	77-79
Number of pages	3
ISBN (Print)	9781479915231
DOIs	https://doi.org/10.1109/SiRF.2014.6828515
Publication status	Published - 2014
Event	2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014 - Newport Beach, CA, United States Duration: 2014 Jan 19 → 2014 Jan 23

Publication series

Name	SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Other

Other	2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014
Country/Territory	United States
City	Newport Beach, CA
Period	2014/01/19 → 2014/01/23

Keywords

CMOS
E-band
Millimeter-wave (MMW)
Power amplifier (PA)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SiRF.2014.6828515

Cite this

Tsai, J. H., Chang, R. A., & Lin, J. Y. (2014). A 69-81 GHz power amplifier using 90nm CMOS technology. In SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 77-79). Article 6828515 (SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems). IEEE Computer Society. https://doi.org/10.1109/SiRF.2014.6828515

A 69-81 GHz power amplifier using 90nm CMOS technology. / Tsai, Jeng Han; Chang, Ruei An; Lin, Ji Yang.
SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. IEEE Computer Society, 2014. p. 77-79 6828515 (SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, JH, Chang, RA & Lin, JY 2014, A 69-81 GHz power amplifier using 90nm CMOS technology. in SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., 6828515, SiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, IEEE Computer Society, pp. 77-79, 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014, Newport Beach, CA, United States, 2014/01/19. https://doi.org/10.1109/SiRF.2014.6828515

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abstract = "A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (Psat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum Psat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.",

keywords = "CMOS, E-band, Millimeter-wave (MMW), Power amplifier (PA)",

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A 69-81 GHz power amplifier using 90nm CMOS technology

Abstract

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Keywords

ASJC Scopus subject areas

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