A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng-Han Tsai, Ruei An Chang, Ji Yang Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (Psat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum Psat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

Original languageEnglish
Title of host publicationSiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherIEEE Computer Society
Pages77-79
Number of pages3
ISBN (Print)9781479915231
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014 - Newport Beach, CA, United States
Duration: 2014 Jan 192014 Jan 23

Publication series

NameSiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Other

Other2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014
CountryUnited States
CityNewport Beach, CA
Period14/1/1914/1/23

Keywords

  • CMOS
  • E-band
  • Millimeter-wave (MMW)
  • Power amplifier (PA)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A 69-81 GHz power amplifier using 90nm CMOS technology'. Together they form a unique fingerprint.

Cite this