A 69-81 GHz power amplifier using 90nm CMOS technology

Jeng-Han Tsai, Ruei An Chang, Ji Yang Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

A 69-81 GHz broadband power amplifier (PA) is implemented on TSMC 90 nm 1P9M CMOS low power (LP) process. Utilizing wideband power matching topology, the PA achieves a flat measured output saturation power (Psat) of 12.5 ± 0.5 dBm from 70 to 80 GHz. The maximum Psat is 12.8 dBm at 76 GHz with peak power added efficiency (PAE) of 9.9% and the output 1-dB compression point (OP1dB) is 9.5 dBm. The PA exhibits flat gain performance of 20 ± 1.5 dB from 69 to 81 GHz which is suitable for 71-76 GHz E-band radio applications.

Original languageEnglish
Title of host publicationSiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PublisherIEEE Computer Society
Pages77-79
Number of pages3
ISBN (Print)9781479915231
DOIs
Publication statusPublished - 2014 Jan 1
Event2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014 - Newport Beach, CA, United States
Duration: 2014 Jan 192014 Jan 23

Publication series

NameSiRF 2014 - 2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Other

Other2014 IEEE 14th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2014
Country/TerritoryUnited States
CityNewport Beach, CA
Period2014/01/192014/01/23

Keywords

  • CMOS
  • E-band
  • Millimeter-wave (MMW)
  • Power amplifier (PA)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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