A 68-83 GHz power amplifier in 90 nm CMOS

Jeffrey Lee; Chung Chun Chen; Jen Han Tsai; Kun You Lin; Huei Wang

doi:10.1109/MWSYM.2009.5165727

A 68-83 GHz power amplifier in 90 nm CMOS

Jeffrey Lee^*, Chung Chun Chen, Jen Han Tsai, Kun You Lin, Huei Wang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

23 Citations (Scopus)

Abstract

A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P_1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.

Original language	English
Title of host publication	IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages	437-440
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2009.5165727
Publication status	Published - 2009
Externally published	Yes
Event	2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States Duration: 2009 Jun 7 → 2009 Jun 12

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
ISSN (Print)	0149-645X

Other

Other	2009 IEEE MTT-S International Microwave Symposium, IMS 2009
Country/Territory	United States
City	Boston, MA
Period	2009/06/07 → 2009/06/12

Keywords

CMOS
MMIC
Millimeter-wave (MMW)
Power amplifier (PA)

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2009.5165727

Cite this

Lee, J, Chen, CC, Tsai, JH, Lin, KY & Wang, H 2009, A 68-83 GHz power amplifier in 90 nm CMOS. in IMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest., 5165727, IEEE MTT-S International Microwave Symposium Digest, pp. 437-440, 2009 IEEE MTT-S International Microwave Symposium, IMS 2009, Boston, MA, United States, 2009/06/07. https://doi.org/10.1109/MWSYM.2009.5165727

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title = "A 68-83 GHz power amplifier in 90 nm CMOS",

abstract = "A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.",

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author = "Jeffrey Lee and Chen, {Chung Chun} and Tsai, {Jen Han} and Lin, {Kun You} and Huei Wang",

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Y1 - 2009

N2 - A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.

AB - A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.

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KW - Millimeter-wave (MMW)

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A 68-83 GHz power amplifier in 90 nm CMOS

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

Access to Document

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