A 68-83 GHz power amplifier in 90 nm CMOS

Jeffrey Lee, Chung Chun Chen, Jen Han Tsai, Kun You Lin, Huei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

A balanced PA covering 68-83 GHz is developed in 90nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.

Original languageEnglish
Title of host publicationIMS 2009 - 2009 IEEE MTT-S International Microwave Symposium Digest
Pages437-440
Number of pages4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 IEEE MTT-S International Microwave Symposium, IMS 2009 - Boston, MA, United States
Duration: 2009 Jun 72009 Jun 12

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X

Other

Other2009 IEEE MTT-S International Microwave Symposium, IMS 2009
CountryUnited States
CityBoston, MA
Period09/6/709/6/12

Keywords

  • CMOS
  • MMIC
  • Millimeter-wave (MMW)
  • Power amplifier (PA)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A 68-83 GHz power amplifier in 90 nm CMOS'. Together they form a unique fingerprint.

Cite this