A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

Jeng Han Tsai; Yu Hui Lin; Yi Fan Tsao; Yuan Wang; Arpan Desai; Ping Hsun Chiu; Heng Tung Hsu

doi:10.1109/APMC57107.2023.10439724

A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

Jeng Han Tsai^*
, Yu Hui Lin
, Yi Fan Tsao
, Yuan Wang
, Arpan Desai
, Ping Hsun Chiu
, Heng Tung Hsu

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (P_sat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.

Original language	English
Title of host publication	2023 Asia-Pacific Microwave Conference, APMC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	171-173
Number of pages	3
ISBN (Electronic)	9781665494182
DOIs	https://doi.org/10.1109/APMC57107.2023.10439724
Publication status	Published - 2023
Event	31st Asia-Pacific Microwave Conference, APMC 2023 - Taipei, Taiwan Duration: 2023 Dec 5 → 2023 Dec 8

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
ISSN (Electronic)	2690-3946

Conference

Conference	31st Asia-Pacific Microwave Conference, APMC 2023
Country/Territory	Taiwan
City	Taipei
Period	2023/12/05 → 2023/12/08

Keywords

Doherty power amplifier
gallium nitride (GaN)
high-electron-mobility transistor (HEMT)
millimeter-wave
V-band

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APMC57107.2023.10439724

Cite this

Tsai, J. H., Lin, Y. H., Tsao, Y. F., Wang, Y., Desai, A., Chiu, P. H., & Hsu, H. T. (2023). A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications. In 2023 Asia-Pacific Microwave Conference, APMC 2023 (pp. 171-173). (Asia-Pacific Microwave Conference Proceedings, APMC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC57107.2023.10439724

A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications. / Tsai, Jeng Han; Lin, Yu Hui; Tsao, Yi Fan et al.
2023 Asia-Pacific Microwave Conference, APMC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 171-173 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, JH, Lin, YH, Tsao, YF, Wang, Y, Desai, A, Chiu, PH & Hsu, HT 2023, A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications. in 2023 Asia-Pacific Microwave Conference, APMC 2023. Asia-Pacific Microwave Conference Proceedings, APMC, Institute of Electrical and Electronics Engineers Inc., pp. 171-173, 31st Asia-Pacific Microwave Conference, APMC 2023, Taipei, Taiwan, 2023/12/05. https://doi.org/10.1109/APMC57107.2023.10439724

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title = "A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications",

abstract = "This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9\% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.",

keywords = "Doherty power amplifier, gallium nitride (GaN), high-electron-mobility transistor (HEMT), millimeter-wave, V-band",

author = "Tsai, \{Jeng Han\} and Lin, \{Yu Hui\} and Tsao, \{Yi Fan\} and Yuan Wang and Arpan Desai and Chiu, \{Ping Hsun\} and Hsu, \{Heng Tung\}",

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T1 - A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

AU - Tsai, Jeng Han

AU - Lin, Yu Hui

AU - Tsao, Yi Fan

AU - Wang, Yuan

AU - Desai, Arpan

AU - Chiu, Ping Hsun

AU - Hsu, Heng Tung

PY - 2023

Y1 - 2023

N2 - This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.

AB - This paper presents a fully integrated Doherty power amplifier (PA) targeting V-band applications. With the implementation in the standard 100-nm GaN/SiC high-electron mobility transistor (HEMT) technology, the fabricated monolithic-microwave integrated circuit (MMIC) Doherty PA achieves a small-signal gain of 17.9 dB, a saturated output power (Psat) of 27.8 dBm, and a peak power-added-efficiency (PAE) of 28.9% at 60 GHz, respectively. Characterized using a 250 MHz 200 MHz 64-quadrature-amplitude-modulation (QAM) single carrier modulated signal at 60 GHz, a corresponding error-vector-magnitude (EVM) of -25.4 dB was obtained while delivering an average output power of 23.4 dBm.

KW - Doherty power amplifier

KW - gallium nitride (GaN)

KW - high-electron-mobility transistor (HEMT)

KW - millimeter-wave

KW - V-band

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BT - 2023 Asia-Pacific Microwave Conference, APMC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications

Abstract

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Keywords

ASJC Scopus subject areas

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