A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai; Hsieh Hung Hsieh; Chun Yu Lin; Li Wei Chu; Shawn S.H. Hsu; Jun De Jin; Tzu Jin Yeh; Chewn Pu Jou; Fu Lung Hsueh; Ming Dou Ker

doi:10.1109/APMC.2012.6421722

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai^*, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

Original language	English
Title of host publication	2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages	747-749
Number of pages	3
DOIs	https://doi.org/10.1109/APMC.2012.6421722
Publication status	Published - 2012
Externally published	Yes
Event	2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan Duration: 2012 Dec 4 → 2012 Dec 7

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC

Other

Other	2012 Asia-Pacific Microwave Conference, APMC 2012
Country/Territory	Taiwan
City	Kaohsiung
Period	2012/12/04 → 2012/12/07

Keywords

CMOS
electrostatic discharge (ESD)
low-noise amplifier (LNA)
millimeter wave (mm-Wave)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APMC.2012.6421722

Cite this

Tsai, M. H., Hsieh, H. H., Lin, C. Y., Chu, L. W., Hsu, S. S. H., Jin, J. D., Yeh, T. J., Jou, C. P., Hsueh, F. L., & Ker, M. D. (2012). A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. In 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (pp. 747-749). Article 6421722 (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2012.6421722

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. / Tsai, Ming Hsien; Hsieh, Hsieh Hung; Lin, Chun Yu et al.
2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 747-749 6421722 (Asia-Pacific Microwave Conference Proceedings, APMC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, MH, Hsieh, HH, Lin, CY, Chu, LW, Hsu, SSH, Jin, JD, Yeh, TJ, Jou, CP, Hsueh, FL & Ker, MD 2012, A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. in 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings., 6421722, Asia-Pacific Microwave Conference Proceedings, APMC, pp. 747-749, 2012 Asia-Pacific Microwave Conference, APMC 2012, Kaohsiung, Taiwan, 2012/12/04. https://doi.org/10.1109/APMC.2012.6421722

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title = "A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS",

abstract = "This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.",

keywords = "CMOS, electrostatic discharge (ESD), low-noise amplifier (LNA), millimeter wave (mm-Wave)",

author = "Tsai, {Ming Hsien} and Hsieh, {Hsieh Hung} and Lin, {Chun Yu} and Chu, {Li Wei} and Hsu, {Shawn S.H.} and Jin, {Jun De} and Yeh, {Tzu Jin} and Jou, {Chewn Pu} and Hsueh, {Fu Lung} and Ker, {Ming Dou}",

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AU - Tsai, Ming Hsien

AU - Hsieh, Hsieh Hung

AU - Lin, Chun Yu

AU - Chu, Li Wei

AU - Hsu, Shawn S.H.

AU - Jin, Jun De

AU - Yeh, Tzu Jin

AU - Jou, Chewn Pu

AU - Hsueh, Fu Lung

AU - Ker, Ming Dou

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N2 - This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

AB - This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

KW - CMOS

KW - electrostatic discharge (ESD)

KW - low-noise amplifier (LNA)

KW - millimeter wave (mm-Wave)

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A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Abstract

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Keywords

ASJC Scopus subject areas

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