A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai; Hsieh Hung Hsieh; Chun Yu Lin; Li Wei Chu; Shawn S.H. Hsu; Jun De Jin; Tzu Jin Yeh; Chewn Pu Jou; Fu Lung Hsueh; Ming Dou Ker

doi:10.1109/APMC.2012.6421722

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai^*, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

Original language	English
Title of host publication	2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages	747-749
Number of pages	3
DOIs	https://doi.org/10.1109/APMC.2012.6421722
Publication status	Published - 2012
Event	2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan Duration: 2012 Dec 4 → 2012 Dec 7

Other

Other	2012 Asia-Pacific Microwave Conference, APMC 2012
Country/Territory	Taiwan
City	Kaohsiung
Period	2012/12/04 → 2012/12/07

Keywords

CMOS
electrostatic discharge (ESD)
low-noise amplifier (LNA)
millimeter wave (mm-Wave)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APMC.2012.6421722

Cite this

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. / Tsai, Ming Hsien; Hsieh, Hsieh Hung; Lin, Chun Yu; Chu, Li Wei; Hsu, Shawn S.H.; Jin, Jun De; Yeh, Tzu Jin; Jou, Chewn Pu; Hsueh, Fu Lung; Ker, Ming Dou.

2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 747-749 6421722.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, MH, Hsieh, HH, Lin, CY, Chu, LW, Hsu, SSH, Jin, JD, Yeh, TJ, Jou, CP, Hsueh, FL & Ker, MD 2012, A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. in 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings., 6421722, pp. 747-749, 2012 Asia-Pacific Microwave Conference, APMC 2012, Kaohsiung, Taiwan, 2012/12/04. https://doi.org/10.1109/APMC.2012.6421722

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title = "A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS",

abstract = "This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.",

keywords = "CMOS, electrostatic discharge (ESD), low-noise amplifier (LNA), millimeter wave (mm-Wave)",

author = "Tsai, {Ming Hsien} and Hsieh, {Hsieh Hung} and Lin, {Chun Yu} and Chu, {Li Wei} and Hsu, {Shawn S.H.} and Jin, {Jun De} and Yeh, {Tzu Jin} and Jou, {Chewn Pu} and Hsueh, {Fu Lung} and Ker, {Ming Dou}",

year = "2012",

doi = "10.1109/APMC.2012.6421722",

language = "English",

isbn = "9781457713309",

pages = "747--749",

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note = "2012 Asia-Pacific Microwave Conference, APMC 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

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T1 - A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

AU - Tsai, Ming Hsien

AU - Hsieh, Hsieh Hung

AU - Lin, Chun Yu

AU - Chu, Li Wei

AU - Hsu, Shawn S.H.

AU - Jin, Jun De

AU - Yeh, Tzu Jin

AU - Jou, Chewn Pu

AU - Hsueh, Fu Lung

AU - Ker, Ming Dou

PY - 2012

Y1 - 2012

N2 - This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

AB - This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

KW - CMOS

KW - electrostatic discharge (ESD)

KW - low-noise amplifier (LNA)

KW - millimeter wave (mm-Wave)

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BT - 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings

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Y2 - 4 December 2012 through 7 December 2012

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A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

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Keywords

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