Abstract
This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.
Original language | English |
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Title of host publication | 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings |
Pages | 747-749 |
Number of pages | 3 |
DOIs | |
Publication status | Published - 2012 |
Event | 2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan Duration: 2012 Dec 4 → 2012 Dec 7 |
Other
Other | 2012 Asia-Pacific Microwave Conference, APMC 2012 |
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Country | Taiwan |
City | Kaohsiung |
Period | 2012/12/04 → 2012/12/07 |
Keywords
- CMOS
- electrostatic discharge (ESD)
- low-noise amplifier (LNA)
- millimeter wave (mm-Wave)
ASJC Scopus subject areas
- Electrical and Electronic Engineering