A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages747-749
Number of pages3
DOIs
Publication statusPublished - 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 2012 Dec 42012 Dec 7

Other

Other2012 Asia-Pacific Microwave Conference, APMC 2012
CountryTaiwan
CityKaohsiung
Period12/12/412/12/7

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Keywords

  • CMOS
  • electrostatic discharge (ESD)
  • low-noise amplifier (LNA)
  • millimeter wave (mm-Wave)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tsai, M. H., Hsieh, H. H., Lin, C. Y., Chu, L. W., Hsu, S. S. H., Jin, J. D., Yeh, T. J., Jou, C. P., Hsueh, F. L., & Ker, M. D. (2012). A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. In 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (pp. 747-749). [6421722] https://doi.org/10.1109/APMC.2012.6421722