A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai*, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

Original languageEnglish
Title of host publication2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages747-749
Number of pages3
DOIs
Publication statusPublished - 2012
Event2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
Duration: 2012 Dec 42012 Dec 7

Other

Other2012 Asia-Pacific Microwave Conference, APMC 2012
Country/TerritoryTaiwan
CityKaohsiung
Period2012/12/042012/12/07

Keywords

  • CMOS
  • electrostatic discharge (ESD)
  • low-noise amplifier (LNA)
  • millimeter wave (mm-Wave)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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