A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai; Hsieh Hung Hsieh; Chun Yu Lin; Li Wei Chu; Shawn S.H. Hsu; Jun De Jin; Tzu Jin Yeh; Chewn Pu Jou; Fu Lung Hsueh; Ming Dou Ker

doi:10.1109/APMC.2012.6421722

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Ming Hsien Tsai, Hsieh Hung Hsieh, Chun Yu Lin, Li Wei Chu, Shawn S.H. Hsu, Jun De Jin, Tzu Jin Yeh, Chewn Pu Jou, Fu Lung Hsueh, Ming Dou Ker

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

Original language	English
Title of host publication	2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
Pages	747-749
Number of pages	3
DOIs	https://doi.org/10.1109/APMC.2012.6421722
Publication status	Published - 2012
Event	2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan Duration: 2012 Dec 4 → 2012 Dec 7

Other

Other	2012 Asia-Pacific Microwave Conference, APMC 2012
Country	Taiwan
City	Kaohsiung
Period	12/12/4 → 12/12/7

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Keywords

CMOS
electrostatic discharge (ESD)
low-noise amplifier (LNA)
millimeter wave (mm-Wave)

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Tsai, M. H., Hsieh, H. H., Lin, C. Y., Chu, L. W., Hsu, S. S. H., Jin, J. D., Yeh, T. J., Jou, C. P., Hsueh, F. L., & Ker, M. D. (2012). A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. In 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (pp. 747-749). [6421722] https://doi.org/10.1109/APMC.2012.6421722

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. / Tsai, Ming Hsien; Hsieh, Hsieh Hung; Lin, Chun Yu; Chu, Li Wei; Hsu, Shawn S.H.; Jin, Jun De; Yeh, Tzu Jin; Jou, Chewn Pu; Hsueh, Fu Lung; Ker, Ming Dou.

2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 747-749 6421722.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsai, MH, Hsieh, HH, Lin, CY, Chu, LW, Hsu, SSH, Jin, JD, Yeh, TJ, Jou, CP, Hsueh, FL & Ker, MD 2012, A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS. in 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings., 6421722, pp. 747-749, 2012 Asia-Pacific Microwave Conference, APMC 2012, Kaohsiung, Taiwan, 12/12/4. https://doi.org/10.1109/APMC.2012.6421722

@inproceedings{92bc1944846c4a05935b966133adb0eb,

title = "A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS",

abstract = "This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.",

keywords = "CMOS, electrostatic discharge (ESD), low-noise amplifier (LNA), millimeter wave (mm-Wave)",

author = "Tsai, {Ming Hsien} and Hsieh, {Hsieh Hung} and Lin, {Chun Yu} and Chu, {Li Wei} and Hsu, {Shawn S.H.} and Jin, {Jun De} and Yeh, {Tzu Jin} and Jou, {Chewn Pu} and Hsueh, {Fu Lung} and Ker, {Ming Dou}",

year = "2012",

doi = "10.1109/APMC.2012.6421722",

language = "English",

isbn = "9781457713309",

pages = "747--749",

booktitle = "2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings",

note = "2012 Asia-Pacific Microwave Conference, APMC 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

TY - GEN

T1 - A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

AU - Tsai, Ming Hsien

AU - Hsieh, Hsieh Hung

AU - Lin, Chun Yu

AU - Chu, Li Wei

AU - Hsu, Shawn S.H.

AU - Jin, Jun De

AU - Yeh, Tzu Jin

AU - Jou, Chewn Pu

AU - Hsueh, Fu Lung

AU - Ker, Ming Dou

PY - 2012

Y1 - 2012

N2 - This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

AB - This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductor-triggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the parasitic capacitance, respectively. Also, a 3-stage wideband V-band LNA is designed by using the gate inductor in the common-gate stage of the cascode topology as gain peaking to compensate the roll-off at high frequencies for bandwidth extension. The measured results demonstrate a 2.5-kV HBM ESD protection level with a minimum noise figure (NF) of 5.1 dB and a peak gain of 22 dB, also a 3-dB bandwidth of 56-67 GHz can be achieved under a power consumption of only 23 mW.

KW - CMOS

KW - electrostatic discharge (ESD)

KW - low-noise amplifier (LNA)

KW - millimeter wave (mm-Wave)

UR - http://www.scopus.com/inward/record.url?scp=84874410394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874410394&partnerID=8YFLogxK

U2 - 10.1109/APMC.2012.6421722

DO - 10.1109/APMC.2012.6421722

M3 - Conference contribution

AN - SCOPUS:84874410394

SN - 9781457713309

SP - 747

EP - 749

BT - 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings

T2 - 2012 Asia-Pacific Microwave Conference, APMC 2012

Y2 - 4 December 2012 through 7 December 2012

ER -

Access to Document

10.1109/APMC.2012.6421722