Abstract
A 53-67 GHz wide locking range injection-locked frequency divider (ILFD) has been designed and fabricated using 0.13-μm CMOS process.By using forward body bias technique, the proposed ILFD demonstrates good performance of the wide locking range while maintaining low DC power consumption. Via a 0 dBm incident signal power, an input locking rage greater than 14 GHz (>23%) is achieved with 4 mW from supply voltage of 0.8 V. If the supply voltage further reduces to 0.6 V, the input locking rage is 6 GHz (10%) while consuming only 1.2 mW. Compared to previous reported works in high-speed CMOS FD, the presented ILFD achieves superior figure of merit (FOM). Without extra voltage control mechanisms to increase the locking range, this FD covers whole 57-64 GHz band is suitable for integration into a 60 GHz WPAN phase-locked loop system. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1386-1389, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25989
Original language | English |
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Pages (from-to) | 1386-1389 |
Number of pages | 4 |
Journal | Microwave and Optical Technology Letters |
Volume | 53 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2011 Jun |
Keywords
- 60 GHz
- CMOS
- WPAN
- body bias
- injection-locked frequency divider
- millimeter wave
- wide locking range
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering