A 5.2 GHz haft-watt fully-integrated CMOS power amplifier

Jeng Han Tsai, Chen Fang Lin, Po Chun Shen, Hong Wun Ou-Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 5.2 GHz fully-integrated power amplifier is designed and fabricated using 0.18-μm 1P6M bulk CMOS technology. Utilizing a 2-way series combining transformer, the CMOS PA achieves a measured maximum saturation output power (Psat) of 27.6 dBm at 5.2 GHz within a compact chip size of 1.2 mm × 1 mm. The measured small signal gain is 13.4 dB, the output 1-dB compression point (OP1dB) is 23.5 dBm, and the peak power-added efficiency (PAE) is 19.2 % at 5.2 GHz. For IEEE 802.11ac WLAN 64-QAM OFDM modulation signal test, the PA meets the EVM requirement of 5.6% (-25 dB) at the linear output power of 16.6 dBm.

Original languageEnglish
Title of host publication2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages407-408
Number of pages2
ISBN (Electronic)9781728135755
DOIs
Publication statusPublished - 2019 Oct
Event8th IEEE Global Conference on Consumer Electronics, GCCE 2019 - Osaka, Japan
Duration: 2019 Oct 152019 Oct 18

Publication series

Name2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019

Conference

Conference8th IEEE Global Conference on Consumer Electronics, GCCE 2019
CountryJapan
CityOsaka
Period19/10/1519/10/18

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Keywords

  • CMOS
  • Power amplifier (PA)
  • Radio frequency integrated circuit (RFIC)
  • Transformer

ASJC Scopus subject areas

  • Instrumentation
  • Artificial Intelligence
  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Tsai, J. H., Lin, C. F., Shen, P. C., & Ou-Yang, H. W. (2019). A 5.2 GHz haft-watt fully-integrated CMOS power amplifier. In 2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019 (pp. 407-408). [9015402] (2019 IEEE 8th Global Conference on Consumer Electronics, GCCE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GCCE46687.2019.9015402