@inproceedings{eb9bb06d95ac482198eb830d9a249c39,
title = "A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications",
abstract = "A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (Psat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 \% at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.",
keywords = "CMOS technology, microwave amplifiers, power amplifiers, radio frequency integrated circuits",
author = "Tsai, \{Jeng Han\} and Ou-Yang, \{Hong Wun\}",
year = "2014",
doi = "10.1109/RWS.2014.6830155",
language = "English",
isbn = "9781479921812",
series = "IEEE Radio and Wireless Symposium, RWS",
publisher = "IEEE Computer Society",
pages = "130--132",
booktitle = "RWS 2014 - Proceedings",
note = "2014 IEEE Radio and Wireless Symposium, RWS 2014 ; Conference date: 19-01-2014 Through 22-01-2014",
}