A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications

Jeng Han Tsai, Hong Wun Ou-Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (Psat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.

Original languageEnglish
Title of host publicationRWS 2014 - Proceedings
Subtitle of host publication2014 IEEE Radio and Wireless Symposium
PublisherIEEE Computer Society
Number of pages3
ISBN (Print)9781479921812
Publication statusPublished - 2014
Event2014 IEEE Radio and Wireless Symposium, RWS 2014 - Newport Beach, CA, United States
Duration: 2014 Jan 192014 Jan 22

Publication series

NameIEEE Radio and Wireless Symposium, RWS
ISSN (Print)2164-2958
ISSN (Electronic)2164-2974


Other2014 IEEE Radio and Wireless Symposium, RWS 2014
Country/TerritoryUnited States
CityNewport Beach, CA


  • CMOS technology
  • microwave amplifiers
  • power amplifiers
  • radio frequency integrated circuits

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Communication


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