A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications

Jeng Han Tsai; Hong Wun Ou-Yang

doi:10.1109/RWS.2014.6830155

A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications

Jeng Han Tsai, Hong Wun Ou-Yang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (P_sat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.

Original language	English
Title of host publication	RWS 2014 - Proceedings
Subtitle of host publication	2014 IEEE Radio and Wireless Symposium
Publisher	IEEE Computer Society
Pages	130-132
Number of pages	3
ISBN (Print)	9781479921812
DOIs	https://doi.org/10.1109/RWS.2014.6830155
Publication status	Published - 2014
Event	2014 IEEE Radio and Wireless Symposium, RWS 2014 - Newport Beach, CA, United States Duration: 2014 Jan 19 → 2014 Jan 22

Publication series

Name	IEEE Radio and Wireless Symposium, RWS
ISSN (Print)	2164-2958
ISSN (Electronic)	2164-2974

Other

Other	2014 IEEE Radio and Wireless Symposium, RWS 2014
Country/Territory	United States
City	Newport Beach, CA
Period	2014/01/19 → 2014/01/22

Keywords

CMOS technology
microwave amplifiers
power amplifiers
radio frequency integrated circuits

ASJC Scopus subject areas

Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering
Communication

Access to Document

10.1109/RWS.2014.6830155

Cite this

Tsai, JH & Ou-Yang, HW 2014, A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications. in RWS 2014 - Proceedings: 2014 IEEE Radio and Wireless Symposium., 6830155, IEEE Radio and Wireless Symposium, RWS, IEEE Computer Society, pp. 130-132, 2014 IEEE Radio and Wireless Symposium, RWS 2014, Newport Beach, CA, United States, 2014/01/19. https://doi.org/10.1109/RWS.2014.6830155

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title = "A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications",

abstract = "A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (Psat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.",

keywords = "CMOS technology, microwave amplifiers, power amplifiers, radio frequency integrated circuits",

author = "Tsai, {Jeng Han} and Ou-Yang, {Hong Wun}",

year = "2014",

doi = "10.1109/RWS.2014.6830155",

language = "English",

isbn = "9781479921812",

series = "IEEE Radio and Wireless Symposium, RWS",

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booktitle = "RWS 2014 - Proceedings",

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AU - Tsai, Jeng Han

AU - Ou-Yang, Hong Wun

PY - 2014

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N2 - A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (Psat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.

AB - A 5-5.8 GHz fully-integrated power amplifier is designed and fabricated in TSMC standard 0.18-μm 1P6M CMOS technology. Utilizing a two-way direct shunt combining technique with an odd mode suppression resistor, the CMOS PA achieves a measured maximum saturation output power (Psat) of 23.1 dBm at 5.2 GHz. The measured output 1-dB compression point (OP1dB) is 18.6 dBm and peak power-added efficiency (PAE) is 19.8 % at 5.2 GHz. By using broadband power matching topology, the output power of the CMOS PA is 22.6 ± 0.5 dBm from 5 to 5.8 GHz.

KW - CMOS technology

KW - microwave amplifiers

KW - power amplifiers

KW - radio frequency integrated circuits

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A 5-5.8 GHz fully-integrated CMOS PA for WLAN applications

Abstract

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Keywords

ASJC Scopus subject areas

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