@inproceedings{af17a489ce5142cca3795b6d3cf9a377,
title = "A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology",
abstract = "This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.",
author = "Hamed Alsuraisry and Chang, {Teng Yuan} and Tsai, {Jeng Han} and Huang, {Tian Wei}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 10th Global Symposium on Millimeter-Waves, GSMM 2017 ; Conference date: 24-05-2017 Through 26-05-2017",
year = "2017",
month = jul,
day = "6",
doi = "10.1109/GSMM.2017.7970328",
language = "English",
series = "10th Global Symposium on Millimeter-Waves, GSMM 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "85--86",
editor = "So, {Kwok Kan} and Chan, {Ka Fai}",
booktitle = "10th Global Symposium on Millimeter-Waves, GSMM 2017",
}