A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology

Hamed Alsuraisry, Teng Yuan Chang, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.

Original languageEnglish
Title of host publication10th Global Symposium on Millimeter-Waves, GSMM 2017
EditorsKwok Kan So, Ka Fai Chan
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-86
Number of pages2
ISBN (Electronic)9781538640036
DOIs
Publication statusPublished - 2017 Jul 6
Event10th Global Symposium on Millimeter-Waves, GSMM 2017 - Hong Kong, Hong Kong
Duration: 2017 May 242017 May 26

Publication series

Name10th Global Symposium on Millimeter-Waves, GSMM 2017

Other

Other10th Global Symposium on Millimeter-Waves, GSMM 2017
CountryHong Kong
CityHong Kong
Period17/5/2417/5/26

Fingerprint

power amplifiers
Power amplifiers
Wireless networks
augmentation
output
Electric potential
power efficiency
chips
electric potential

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation
  • Radiation

Cite this

Alsuraisry, H., Chang, T. Y., Tsai, J. H., & Huang, T. W. (2017). A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology. In K. K. So, & K. F. Chan (Eds.), 10th Global Symposium on Millimeter-Waves, GSMM 2017 (pp. 85-86). [7970328] (10th Global Symposium on Millimeter-Waves, GSMM 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/GSMM.2017.7970328

A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology. / Alsuraisry, Hamed; Chang, Teng Yuan; Tsai, Jeng Han; Huang, Tian Wei.

10th Global Symposium on Millimeter-Waves, GSMM 2017. ed. / Kwok Kan So; Ka Fai Chan. Institute of Electrical and Electronics Engineers Inc., 2017. p. 85-86 7970328 (10th Global Symposium on Millimeter-Waves, GSMM 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alsuraisry, H, Chang, TY, Tsai, JH & Huang, TW 2017, A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology. in KK So & KF Chan (eds), 10th Global Symposium on Millimeter-Waves, GSMM 2017., 7970328, 10th Global Symposium on Millimeter-Waves, GSMM 2017, Institute of Electrical and Electronics Engineers Inc., pp. 85-86, 10th Global Symposium on Millimeter-Waves, GSMM 2017, Hong Kong, Hong Kong, 17/5/24. https://doi.org/10.1109/GSMM.2017.7970328
Alsuraisry H, Chang TY, Tsai JH, Huang TW. A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology. In So KK, Chan KF, editors, 10th Global Symposium on Millimeter-Waves, GSMM 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 85-86. 7970328. (10th Global Symposium on Millimeter-Waves, GSMM 2017). https://doi.org/10.1109/GSMM.2017.7970328
Alsuraisry, Hamed ; Chang, Teng Yuan ; Tsai, Jeng Han ; Huang, Tian Wei. / A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology. 10th Global Symposium on Millimeter-Waves, GSMM 2017. editor / Kwok Kan So ; Ka Fai Chan. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 85-86 (10th Global Symposium on Millimeter-Waves, GSMM 2017).
@inproceedings{3e80689197ce4bafba3c79087413dee8,
title = "A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology",
abstract = "This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28{\%} under 4V supply voltage. This chip occupies an area of 3.75 mm2.",
author = "Hamed Alsuraisry and Chang, {Teng Yuan} and Tsai, {Jeng Han} and Huang, {Tian Wei}",
year = "2017",
month = "7",
day = "6",
doi = "10.1109/GSMM.2017.7970328",
language = "English",
series = "10th Global Symposium on Millimeter-Waves, GSMM 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "85--86",
editor = "So, {Kwok Kan} and Chan, {Ka Fai}",
booktitle = "10th Global Symposium on Millimeter-Waves, GSMM 2017",

}

TY - GEN

T1 - A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology

AU - Alsuraisry, Hamed

AU - Chang, Teng Yuan

AU - Tsai, Jeng Han

AU - Huang, Tian Wei

PY - 2017/7/6

Y1 - 2017/7/6

N2 - This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.

AB - This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.

UR - http://www.scopus.com/inward/record.url?scp=85027133419&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027133419&partnerID=8YFLogxK

U2 - 10.1109/GSMM.2017.7970328

DO - 10.1109/GSMM.2017.7970328

M3 - Conference contribution

AN - SCOPUS:85027133419

T3 - 10th Global Symposium on Millimeter-Waves, GSMM 2017

SP - 85

EP - 86

BT - 10th Global Symposium on Millimeter-Waves, GSMM 2017

A2 - So, Kwok Kan

A2 - Chan, Ka Fai

PB - Institute of Electrical and Electronics Engineers Inc.

ER -