A 38GHz 27dBm power amplifier in enhancement mode GaAs PHEMT technology

Hamed Alsuraisry, Teng Yuan Chang, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper presents a 38 GHz power amplifier for the fifth generation mobile networks (5G) using 0.15 μm enhancement mode (E-mode) GaAs pHEMT technology. This proposed 3-stage PA consists of two driver stages, and one power stage with combining four power devices. It has 24.7 dB small signal gain and can achieve a saturated output power (Psat) of 28.1dBm and 1-dB compression output power (OP1dB) of 27.1 dBm with peak power-added efficiency (PAE) of 28% under 4V supply voltage. This chip occupies an area of 3.75 mm2.

Original languageEnglish
Title of host publication10th Global Symposium on Millimeter-Waves, GSMM 2017
EditorsKwok Kan So, Ka Fai Chan
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages85-86
Number of pages2
ISBN (Electronic)9781538640036
DOIs
Publication statusPublished - 2017 Jul 6
Event10th Global Symposium on Millimeter-Waves, GSMM 2017 - Hong Kong, Hong Kong
Duration: 2017 May 242017 May 26

Publication series

Name10th Global Symposium on Millimeter-Waves, GSMM 2017

Other

Other10th Global Symposium on Millimeter-Waves, GSMM 2017
CountryHong Kong
CityHong Kong
Period17/5/2417/5/26

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation
  • Radiation

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