TY - GEN
T1 - A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal
AU - Chen, Yu Chun
AU - Tsai, Tsung Ching
AU - Tsai, Jeng Han
AU - Huang, Tian Wei
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - A 38-GHz-band transformer based high linear power amplifier with analog pre-distortion for wideband modulated signal in 65-nm GP CMOS process is presented in this paper. The output power is based on the two-way transformer current combining structure. The driver amplifier which is biased in deep class-AB acts as an AM-AM pre-distorter to produce better OP1dB and improve the third order intermodulation distortion (IMD3). Also a PMOS capacitor is used to compensate the AM-PM distortion of the input capacitor at the driver stage. In the continuous-wave measurement, this power amplifier achieves 14.4-dB small-signal power gain, 20.7-dBm PSAT, 35% PAEMAX, 20.2-dBm OP1dB, and 32.8% PAE1dB at 39 GHz. In the modulated signal measurement, this power amplifier achieves 13.2-dBm output power, 7.1% PAE, and EVM < -25 dBc at 1600-MHz channel bandwidth of 64-QAM OFDM with 38-GHz carrier frequency. The highest transmission data rate of the proposed power amplifier reaches up to 6.98 Gb/s.
AB - A 38-GHz-band transformer based high linear power amplifier with analog pre-distortion for wideband modulated signal in 65-nm GP CMOS process is presented in this paper. The output power is based on the two-way transformer current combining structure. The driver amplifier which is biased in deep class-AB acts as an AM-AM pre-distorter to produce better OP1dB and improve the third order intermodulation distortion (IMD3). Also a PMOS capacitor is used to compensate the AM-PM distortion of the input capacitor at the driver stage. In the continuous-wave measurement, this power amplifier achieves 14.4-dB small-signal power gain, 20.7-dBm PSAT, 35% PAEMAX, 20.2-dBm OP1dB, and 32.8% PAE1dB at 39 GHz. In the modulated signal measurement, this power amplifier achieves 13.2-dBm output power, 7.1% PAE, and EVM < -25 dBc at 1600-MHz channel bandwidth of 64-QAM OFDM with 38-GHz carrier frequency. The highest transmission data rate of the proposed power amplifier reaches up to 6.98 Gb/s.
KW - 5G mobile communication
KW - CMOS integrated circuits
KW - millimeter wave integrated circuits
KW - power amplifiers
KW - predistortion
KW - quadrature amplitude modulation
UR - http://www.scopus.com/inward/record.url?scp=85069959697&partnerID=8YFLogxK
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U2 - 10.1109/mwsym.2019.8701080
DO - 10.1109/mwsym.2019.8701080
M3 - Conference contribution
AN - SCOPUS:85069959697
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 312
EP - 315
BT - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Y2 - 2 June 2019 through 7 June 2019
ER -