A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal

Yu Chun Chen, Tsung Ching Tsai, Jeng-Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 38-GHz-band transformer based high linear power amplifier with analog pre-distortion for wideband modulated signal in 65-nm GP CMOS process is presented in this paper. The output power is based on the two-way transformer current combining structure. The driver amplifier which is biased in deep class-AB acts as an AM-AM pre-distorter to produce better OP1dB and improve the third order intermodulation distortion (IMD3). Also a PMOS capacitor is used to compensate the AM-PM distortion of the input capacitor at the driver stage. In the continuous-wave measurement, this power amplifier achieves 14.4-dB small-signal power gain, 20.7-dBm PSAT, 35% PAEMAX, 20.2-dBm OP1dB, and 32.8% PAE1dB at 39 GHz. In the modulated signal measurement, this power amplifier achieves 13.2-dBm output power, 7.1% PAE, and EVM < -25 dBc at 1600-MHz channel bandwidth of 64-QAM OFDM with 38-GHz carrier frequency. The highest transmission data rate of the proposed power amplifier reaches up to 6.98 Gb/s.

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages312-315
Number of pages4
ISBN (Electronic)9781728113098
Publication statusPublished - 2019 Jun 1
Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
Duration: 2019 Jun 22019 Jun 7

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2019-June
ISSN (Print)0149-645X

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
CountryUnited States
CityBoston
Period19/6/219/6/7

Fingerprint

quadrature amplitude modulation
Quadrature amplitude modulation
power amplifiers
Power amplifiers
Orthogonal frequency division multiplexing
analogs
bandwidth
Bandwidth
transformers
capacitors
Capacitors
linear amplifiers
Intermodulation distortion
signal measurement
power gain
Electric instrument transformers
intermodulation
output
carrier frequencies
data transmission

Keywords

  • 5G mobile communication
  • CMOS integrated circuits
  • millimeter wave integrated circuits
  • power amplifiers
  • predistortion
  • quadrature amplitude modulation

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chen, Y. C., Tsai, T. C., Tsai, J-H., & Huang, T. W. (2019). A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 (pp. 312-315). [8701080] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc..

A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal. / Chen, Yu Chun; Tsai, Tsung Ching; Tsai, Jeng-Han; Huang, Tian Wei.

2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 312-315 8701080 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, YC, Tsai, TC, Tsai, J-H & Huang, TW 2019, A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal. in 2019 IEEE MTT-S International Microwave Symposium, IMS 2019., 8701080, IEEE MTT-S International Microwave Symposium Digest, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 312-315, 2019 IEEE MTT-S International Microwave Symposium, IMS 2019, Boston, United States, 19/6/2.
Chen YC, Tsai TC, Tsai J-H, Huang TW. A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 312-315. 8701080. (IEEE MTT-S International Microwave Symposium Digest).
Chen, Yu Chun ; Tsai, Tsung Ching ; Tsai, Jeng-Han ; Huang, Tian Wei. / A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal. 2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 312-315 (IEEE MTT-S International Microwave Symposium Digest).
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title = "A 38-GHz-Band Power Amplifier with Analog Pre-distortion for 1600-MHz Transmission Bandwidth 64-QAM OFDM Modulated Signal",
abstract = "A 38-GHz-band transformer based high linear power amplifier with analog pre-distortion for wideband modulated signal in 65-nm GP CMOS process is presented in this paper. The output power is based on the two-way transformer current combining structure. The driver amplifier which is biased in deep class-AB acts as an AM-AM pre-distorter to produce better OP1dB and improve the third order intermodulation distortion (IMD3). Also a PMOS capacitor is used to compensate the AM-PM distortion of the input capacitor at the driver stage. In the continuous-wave measurement, this power amplifier achieves 14.4-dB small-signal power gain, 20.7-dBm PSAT, 35{\%} PAEMAX, 20.2-dBm OP1dB, and 32.8{\%} PAE1dB at 39 GHz. In the modulated signal measurement, this power amplifier achieves 13.2-dBm output power, 7.1{\%} PAE, and EVM < -25 dBc at 1600-MHz channel bandwidth of 64-QAM OFDM with 38-GHz carrier frequency. The highest transmission data rate of the proposed power amplifier reaches up to 6.98 Gb/s.",
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AB - A 38-GHz-band transformer based high linear power amplifier with analog pre-distortion for wideband modulated signal in 65-nm GP CMOS process is presented in this paper. The output power is based on the two-way transformer current combining structure. The driver amplifier which is biased in deep class-AB acts as an AM-AM pre-distorter to produce better OP1dB and improve the third order intermodulation distortion (IMD3). Also a PMOS capacitor is used to compensate the AM-PM distortion of the input capacitor at the driver stage. In the continuous-wave measurement, this power amplifier achieves 14.4-dB small-signal power gain, 20.7-dBm PSAT, 35% PAEMAX, 20.2-dBm OP1dB, and 32.8% PAE1dB at 39 GHz. In the modulated signal measurement, this power amplifier achieves 13.2-dBm output power, 7.1% PAE, and EVM < -25 dBc at 1600-MHz channel bandwidth of 64-QAM OFDM with 38-GHz carrier frequency. The highest transmission data rate of the proposed power amplifier reaches up to 6.98 Gb/s.

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