A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process

Jeng Han Tsai, Yi Chien Cheng, Chuan Chi Hung, Kun Chan Chiang, Wei Teung Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A 37-40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28% at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is 13.5 dB. The chip size is 2.03 × 1.03 mm2.

Original languageEnglish
Title of host publication2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017
PublisherIEEE Computer Society
Pages85-87
Number of pages3
ISBN (Electronic)9781509040148
DOIs
Publication statusPublished - 2017 Dec 14
Event7th IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017 - Berlin, Germany
Duration: 2017 Sep 32017 Sep 6

Publication series

NameIEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin
Volume2017-September
ISSN (Print)2166-6814
ISSN (Electronic)2166-6822

Other

Other7th IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017
CountryGermany
CityBerlin
Period17/9/317/9/6

Fingerprint

Power amplifiers
Electric lines

Keywords

  • MMIC
  • fifth-generation (5G)
  • phased array transceiver
  • power amplifier (PA)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Media Technology

Cite this

Tsai, J. H., Cheng, Y. C., Hung, C. C., Chiang, K. C., & Li, W. T. (2017). A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process. In 2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017 (pp. 85-87). (IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin; Vol. 2017-September). IEEE Computer Society. https://doi.org/10.1109/ICCE-Berlin.2017.8210597

A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process. / Tsai, Jeng Han; Cheng, Yi Chien; Hung, Chuan Chi; Chiang, Kun Chan; Li, Wei Teung.

2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017. IEEE Computer Society, 2017. p. 85-87 (IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin; Vol. 2017-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsai, JH, Cheng, YC, Hung, CC, Chiang, KC & Li, WT 2017, A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process. in 2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017. IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin, vol. 2017-September, IEEE Computer Society, pp. 85-87, 7th IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017, Berlin, Germany, 17/9/3. https://doi.org/10.1109/ICCE-Berlin.2017.8210597
Tsai JH, Cheng YC, Hung CC, Chiang KC, Li WT. A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process. In 2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017. IEEE Computer Society. 2017. p. 85-87. (IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin). https://doi.org/10.1109/ICCE-Berlin.2017.8210597
Tsai, Jeng Han ; Cheng, Yi Chien ; Hung, Chuan Chi ; Chiang, Kun Chan ; Li, Wei Teung. / A 37-40 GHz power amplifier for 5G phased array applications using 0.1-μm GaAs pHEMT process. 2017 IEEE 7th International Conference on Consumer Electronics - Berlin, ICCE-Berlin 2017. IEEE Computer Society, 2017. pp. 85-87 (IEEE International Conference on Consumer Electronics - Berlin, ICCE-Berlin).
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abstract = "A 37-40 GHz power amplifier (PA) has been designed and fabricated on 0.1-μm GaAs pHEMT process. Utilizing two-way direct shunt power combining and low impedance transmission line pre-matching technique, the PA achieves measured saturation output power of 25.6 dBm with peak power added efficiency (PAE) of 28{\%} at 38 GHz. The measured output 1-dB gain compression point is 24.6 dBm and the peak gain is 13.5 dB. The chip size is 2.03 × 1.03 mm2.",
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