A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors

To Po Wang, Ren Chieh Liu, Hong Yeh Chang, Jeng Han Tsai, Liang Hung Lu, Huei Wang

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.

Original languageEnglish
Article number4014963
Pages (from-to)569-572
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: 2006 Jun 112006 Jun 16

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inductors
Phase noise
CMOS
oscillators
voltage controlled oscillators
output
Variable frequency oscillators
figure of merit
rejection
Q factors

Keywords

  • Micromachined inductors
  • Voltage-controlled oscillators (VCOs)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors. / Wang, To Po; Liu, Ren Chieh; Chang, Hong Yeh; Tsai, Jeng Han; Lu, Liang Hung; Wang, Huei.

In: IEEE MTT-S International Microwave Symposium Digest, 01.12.2006, p. 569-572.

Research output: Contribution to journalConference article

Wang, To Po ; Liu, Ren Chieh ; Chang, Hong Yeh ; Tsai, Jeng Han ; Lu, Liang Hung ; Wang, Huei. / A 30-GHz low-phase-noise 0.35-μm CMOS push-push oscillator using micromachined inductors. In: IEEE MTT-S International Microwave Symposium Digest. 2006 ; pp. 569-572.
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AU - Wang, To Po

AU - Liu, Ren Chieh

AU - Chang, Hong Yeh

AU - Tsai, Jeng Han

AU - Lu, Liang Hung

AU - Wang, Huei

PY - 2006/12/1

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N2 - A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.

AB - A low-phase-noise 0.35-μm CMOS push-push oscillator utilizing micromachined inductors is presented in this paper. With the micromachined high-Q inductors, the oscillator achieves an oscillating frequency of 30.9 GHz while exhibiting an output power of -4 dBm with a low phase noise of -102.3 dBc/Hz at 1-MHz offset and the figure of merit (FoM) of -171.4 dBc/Hz. The fundamental rejection is 30 dB. This oscillator achieves low phase noise, good FOM, high output power, and also demonstrates the highest operating frequency among previously published Si-based and GaAs-based VCOs using micromachined structures.

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KW - Voltage-controlled oscillators (VCOs)

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