A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology

Ian Huang, Shao Ting Yen, Wei Pang Chao, Jeng Han Tsai, Abdulelah Alshehri, Mazen Almalki, Abdulhamid Sayed, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This paper presents a power amplifier that performs well at both 28 GHz and 29 GHz for fifth generation mobile networks (5G) and satellite communications using 0.15-um D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices. The power amplifier with two-stage common-source (CS) and four-way direct combining architecture attained a small signal gain of 16.1 dB, the output 1-dB compression power (OPldB) of 29.1 dBm, and the power-added efficiency at OPldB of 27% at 28 GHz under 6-V supply voltage. At 29 GHz the small signal gain is 16 dB, the OPldB is 28.6 dBm, and the power-added efficiency at OPldB is 24.6% under 6-V supply voltage.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages986-988
Number of pages3
ISBN (Electronic)9784902339451
DOIs
Publication statusPublished - 2019 Jan 16
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 2018 Nov 62018 Nov 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2018-November

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
Country/TerritoryJapan
CityKyoto
Period2018/11/062018/11/09

Keywords

  • 5G mobile communication
  • Power Amplifiers
  • Satellite communications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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