A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology

Ian Huang, Shao Ting Yen, Wei Pang Chao, Jeng Han Tsai, Abdulelah Alshehri, Mazen Almalki, Abdulhamid Sayed, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a power amplifier that performs well at both 28 GHz and 29 GHz for fifth generation mobile networks (5G) and satellite communications using 0.15-um D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices. The power amplifier with two-stage common-source (CS) and four-way direct combining architecture attained a small signal gain of 16.1 dB, the output 1-dB compression power (OPldB) of 29.1 dBm, and the power-added efficiency at OPldB of 27% at 28 GHz under 6-V supply voltage. At 29 GHz the small signal gain is 16 dB, the OPldB is 28.6 dBm, and the power-added efficiency at OPldB is 24.6% under 6-V supply voltage.

Original languageEnglish
Title of host publication2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages986-988
Number of pages3
ISBN (Electronic)9784902339451
DOIs
Publication statusPublished - 2019 Jan 16
Event30th Asia-Pacific Microwave Conference, APMC 2018 - Kyoto, Japan
Duration: 2018 Nov 62018 Nov 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume2018-November

Conference

Conference30th Asia-Pacific Microwave Conference, APMC 2018
CountryJapan
CityKyoto
Period18/11/618/11/9

Fingerprint

High electron mobility transistors
Power amplifiers
Satellites
Communication
Communication satellites
Electric potential
Wireless networks

Keywords

  • 5G mobile communication
  • Power Amplifiers
  • Satellite communications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Huang, I., Yen, S. T., Chao, W. P., Tsai, J. H., Alshehri, A., Almalki, M., ... Huang, T. W. (2019). A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings (pp. 986-988). [8617649] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/APMC.2018.8617649

A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology. / Huang, Ian; Yen, Shao Ting; Chao, Wei Pang; Tsai, Jeng Han; Alshehri, Abdulelah; Almalki, Mazen; Sayed, Abdulhamid; Huang, Tian Wei.

2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 986-988 8617649 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 2018-November).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, I, Yen, ST, Chao, WP, Tsai, JH, Alshehri, A, Almalki, M, Sayed, A & Huang, TW 2019, A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology. in 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings., 8617649, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 2018-November, Institute of Electrical and Electronics Engineers Inc., pp. 986-988, 30th Asia-Pacific Microwave Conference, APMC 2018, Kyoto, Japan, 18/11/6. https://doi.org/10.23919/APMC.2018.8617649
Huang I, Yen ST, Chao WP, Tsai JH, Alshehri A, Almalki M et al. A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology. In 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 986-988. 8617649. (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.23919/APMC.2018.8617649
Huang, Ian ; Yen, Shao Ting ; Chao, Wei Pang ; Tsai, Jeng Han ; Alshehri, Abdulelah ; Almalki, Mazen ; Sayed, Abdulhamid ; Huang, Tian Wei. / A 29.6 dBm 29-GHz power amplifier for satellite and 5G communications using 0.15-µm GaAs p-HEMT technology. 2018 Asia-Pacific Microwave Conference, APMC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 986-988 (Asia-Pacific Microwave Conference Proceedings, APMC).
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abstract = "This paper presents a power amplifier that performs well at both 28 GHz and 29 GHz for fifth generation mobile networks (5G) and satellite communications using 0.15-um D-mode GaAs pseudomorphic high electron mobility transistor (p-HEMT) devices. The power amplifier with two-stage common-source (CS) and four-way direct combining architecture attained a small signal gain of 16.1 dB, the output 1-dB compression power (OPldB) of 29.1 dBm, and the power-added efficiency at OPldB of 27{\%} at 28 GHz under 6-V supply voltage. At 29 GHz the small signal gain is 16 dB, the OPldB is 28.6 dBm, and the power-added efficiency at OPldB is 24.6{\%} under 6-V supply voltage.",
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AU - Alshehri, Abdulelah

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AU - Sayed, Abdulhamid

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