A 28-nm CMOS D-Band Passive Modulator Achieving 43-dB Image Rejection Ratio

  • Tian Wei Huang
  • , Kai Jie Chuang
  • , Kin Ping Tang
  • , Yi Wen Wang
  • , Ting Yu Chang
  • , Jeng Han Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a D-band sub-harmonic IQ modulator in 28-nm CMOS, achieving a 43 dB image rejection ratio (IRR) with zero DC power consumption. The design integrates a Lange coupler and stacked metal passive components to reduce insertion loss and enhance quadrature accuracy. The modulator achieves a conversion gain (CG) of -8 dB and an average IRR of 40 dB from 142 GHz to 152 GHz. Measurement results confirm that the proposed architecture effectively mitigates phase and amplitude mismatches, making it a promising candidate for high-frequency communication systems.

Original languageEnglish
Title of host publication2025 20th European Microwave Integrated Circuits Conference, EuMIC 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages363-366
Number of pages4
ISBN (Electronic)9782874870828
DOIs
Publication statusPublished - 2025
Event20th European Microwave Integrated Circuits Conference, EuMIC 2025 - Utrecht, Netherlands
Duration: 2025 Sept 222025 Sept 23

Publication series

Name2025 20th European Microwave Integrated Circuits Conference, EuMIC 2025

Conference

Conference20th European Microwave Integrated Circuits Conference, EuMIC 2025
Country/TerritoryNetherlands
CityUtrecht
Period2025/09/222025/09/23

Keywords

  • balun
  • coupler
  • D-band
  • image rejection ratio
  • modulator

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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