TY - GEN
T1 - A 28 GHz linear and efficient power amplifier supporting wideband OFDM for 5G in 28nm CMOS
AU - Chang, Yen Wei
AU - Tsai, Tsung Ching
AU - Zhong, Jie Ying
AU - Tsai, Jeng Han
AU - Huang, Tian Wei
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - This paper presents a bulk CMOS power amplifier targeting enhanced mobile broadband (eMBB) in 5G New Radio (5G NR). To realize a wideband OFDM and high linearity PA, a ladder-transformer network with second-order harmonic traps is proposed in this paper. Fabricated and designed in 28nm CMOS LP under 1 V supply, the two-staged PA is aimed at 28 GHz with class-AB operation. The designed PA measured continuous wave (CW) signal performance at 28 GHz with small-signal gain 18.5 dB, Psat 18.9 dBm and PAEmax 39.7%. As for modulated signal, with stringent 9.6dB PAPR 64-QAM OFDM signal, the PA supports up to 1.2GHz RFBW with high Pout, avg/P eof 9.3dBml10.3% and 4.32 Gb/s data rate. 5G-NR 64-QAM OFDM signals at 28GHz with non-contiguous 2CC scenarios are also shown in this paper.
AB - This paper presents a bulk CMOS power amplifier targeting enhanced mobile broadband (eMBB) in 5G New Radio (5G NR). To realize a wideband OFDM and high linearity PA, a ladder-transformer network with second-order harmonic traps is proposed in this paper. Fabricated and designed in 28nm CMOS LP under 1 V supply, the two-staged PA is aimed at 28 GHz with class-AB operation. The designed PA measured continuous wave (CW) signal performance at 28 GHz with small-signal gain 18.5 dB, Psat 18.9 dBm and PAEmax 39.7%. As for modulated signal, with stringent 9.6dB PAPR 64-QAM OFDM signal, the PA supports up to 1.2GHz RFBW with high Pout, avg/P eof 9.3dBml10.3% and 4.32 Gb/s data rate. 5G-NR 64-QAM OFDM signals at 28GHz with non-contiguous 2CC scenarios are also shown in this paper.
KW - 28 GHz
KW - CMOS
KW - Component carriers (CC)
KW - Fifth generation (5G) mobile
KW - Orthogonal frequency division multiplexing (OFDM)
KW - Power amplifier
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U2 - 10.1109/IMS30576.2020.9223864
DO - 10.1109/IMS30576.2020.9223864
M3 - Conference contribution
AN - SCOPUS:85094211718
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 1093
EP - 1096
BT - IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Y2 - 4 August 2020 through 6 August 2020
ER -