A 28 GHz linear and efficient power amplifier supporting wideband OFDM for 5G in 28nm CMOS

Yen Wei Chang, Tsung Ching Tsai, Jie Ying Zhong, Jeng Han Tsai*, Tian Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)


This paper presents a bulk CMOS power amplifier targeting enhanced mobile broadband (eMBB) in 5G New Radio (5G NR). To realize a wideband OFDM and high linearity PA, a ladder-transformer network with second-order harmonic traps is proposed in this paper. Fabricated and designed in 28nm CMOS LP under 1 V supply, the two-staged PA is aimed at 28 GHz with class-AB operation. The designed PA measured continuous wave (CW) signal performance at 28 GHz with small-signal gain 18.5 dB, Psat 18.9 dBm and PAEmax 39.7%. As for modulated signal, with stringent 9.6dB PAPR 64-QAM OFDM signal, the PA supports up to 1.2GHz RFBW with high Pout, avg/P eof 9.3dBml10.3% and 4.32 Gb/s data rate. 5G-NR 64-QAM OFDM signals at 28GHz with non-contiguous 2CC scenarios are also shown in this paper.

Original languageEnglish
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)9781728168159
Publication statusPublished - 2020 Aug
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 2020 Aug 42020 Aug 6

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/TerritoryUnited States
CityVirtual, Los Angeles


  • 28 GHz
  • CMOS
  • Component carriers (CC)
  • Fifth generation (5G) mobile
  • Orthogonal frequency division multiplexing (OFDM)
  • Power amplifier

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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