A 28 GHz linear and efficient power amplifier supporting wideband OFDM for 5G in 28nm CMOS

Yen Wei Chang, Tsung Ching Tsai, Jie Ying Zhong, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a bulk CMOS power amplifier targeting enhanced mobile broadband (eMBB) in 5G New Radio (5G NR). To realize a wideband OFDM and high linearity PA, a ladder-transformer network with second-order harmonic traps is proposed in this paper. Fabricated and designed in 28nm CMOS LP under 1 V supply, the two-staged PA is aimed at 28 GHz with class-AB operation. The designed PA measured continuous wave (CW) signal performance at 28 GHz with small-signal gain 18.5 dB, Psat 18.9 dBm and PAEmax 39.7%. As for modulated signal, with stringent 9.6dB PAPR 64-QAM OFDM signal, the PA supports up to 1.2GHz RFBW with high Pout, avg/P eof 9.3dBml10.3% and 4.32 Gb/s data rate. 5G-NR 64-QAM OFDM signals at 28GHz with non-contiguous 2CC scenarios are also shown in this paper.

Original languageEnglish
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1093-1096
Number of pages4
ISBN (Electronic)9781728168159
DOIs
Publication statusPublished - 2020 Aug
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: 2020 Aug 42020 Aug 6

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2020-August
ISSN (Print)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
CountryUnited States
CityVirtual, Los Angeles
Period20/8/420/8/6

Keywords

  • 28 GHz
  • CMOS
  • Component carriers (CC)
  • Fifth generation (5G) mobile
  • Orthogonal frequency division multiplexing (OFDM)
  • Power amplifier

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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