A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology

Jui Cheng Hung; Yu Tung Cheng; Jeng Han Tsai; Tian Wei Huang

doi:10.1109/RFIT52905.2021.9565315

A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology

Jui Cheng Hung, Yu Tung Cheng, Jeng Han Tsai, Tian Wei Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz.

Original language	English
Title of host publication	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665433914
DOIs	https://doi.org/10.1109/RFIT52905.2021.9565315
Publication status	Published - 2021 Aug 25
Event	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan Duration: 2021 Aug 25 → 2021 Aug 27

Publication series

Name	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference	2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/Territory	Taiwan
City	Hualien
Period	2021/08/25 → 2021/08/27

Keywords

5G
CMOS
Class-F
Power amplifier
millimeter-wave

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Instrumentation

Access to Document

10.1109/RFIT52905.2021.9565315

Cite this

Hung, J. C., Cheng, Y. T., Tsai, J. H., & Huang, T. W. (2021). A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT52905.2021.9565315

A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology. / Hung, Jui Cheng; Cheng, Yu Tung; Tsai, Jeng Han et al.
2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hung, JC, Cheng, YT, Tsai, JH & Huang, TW 2021, A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology. in 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Institute of Electrical and Electronics Engineers Inc., 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021, Hualien, Taiwan, 2021/08/25. https://doi.org/10.1109/RFIT52905.2021.9565315

Hung JC, Cheng YT, Tsai JH, Huang TW. A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology. In 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021). doi: 10.1109/RFIT52905.2021.9565315

Hung, Jui Cheng ; Cheng, Yu Tung ; Tsai, Jeng Han et al. / A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology. 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021).

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title = "A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology",

abstract = "A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz.",

keywords = "5G, CMOS, Class-F, Power amplifier, millimeter-wave",

author = "Hung, {Jui Cheng} and Cheng, {Yu Tung} and Tsai, {Jeng Han} and Huang, {Tian Wei}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 ; Conference date: 25-08-2021 Through 27-08-2021",

year = "2021",

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day = "25",

doi = "10.1109/RFIT52905.2021.9565315",

language = "English",

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AU - Huang, Tian Wei

PY - 2021/8/25

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N2 - A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz.

AB - A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz.

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KW - Class-F

KW - Power amplifier

KW - millimeter-wave

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A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology

Abstract

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Keywords

ASJC Scopus subject areas

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