A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology

Jui Cheng Hung, Yu Tung Cheng, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than-35.35/-36.2 dB at 28 GHz.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665433914
DOIs
Publication statusPublished - 2021 Aug 25
Event2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan
Duration: 2021 Aug 252021 Aug 27

Publication series

Name2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/TerritoryTaiwan
CityHualien
Period2021/08/252021/08/27

Keywords

  • 5G
  • CMOS
  • Class-F
  • Power amplifier
  • millimeter-wave

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Instrumentation

Fingerprint

Dive into the research topics of 'A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under-36.2 dBc EVM in 28-nm CMOS Technology'. Together they form a unique fingerprint.

Cite this