TY - GEN
T1 - A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
AU - Chiang, Kun Chan
AU - Tsai, Tsung Ching
AU - Huang, Ian
AU - Tsai, Jeng Han
AU - Huang, Tian Wei
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.
AB - A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.
KW - 5G mobile communication
KW - CMOS integrated circuits
KW - power amplifiers
KW - transformers
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M3 - Conference contribution
AN - SCOPUS:85069953993
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 1283
EP - 1286
BT - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Y2 - 2 June 2019 through 7 June 2019
ER -