A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS

Kun Chan Chiang, Tsung Ching Tsai, Ian Huang, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1283-1286
Number of pages4
ISBN (Electronic)9781728113098
Publication statusPublished - 2019 Jun
Event2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States
Duration: 2019 Jun 22019 Jun 7

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2019-June
ISSN (Print)0149-645X

Conference

Conference2019 IEEE MTT-S International Microwave Symposium, IMS 2019
CountryUnited States
CityBoston
Period19/6/219/6/7

Fingerprint

power amplifiers
Power amplifiers
transformers
radiant flux density
CMOS
output
cells
chips
power loss
power efficiency
Topology
Aluminum
topology
Networks (circuits)
amplifiers
aluminum

Keywords

  • 5G mobile communication
  • CMOS integrated circuits
  • power amplifiers
  • transformers

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Chiang, K. C., Tsai, T. C., Huang, I., Tsai, J. H., & Huang, T. W. (2019). A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 (pp. 1283-1286). [8700802] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc..

A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. / Chiang, Kun Chan; Tsai, Tsung Ching; Huang, Ian; Tsai, Jeng Han; Huang, Tian Wei.

2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1283-1286 8700802 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chiang, KC, Tsai, TC, Huang, I, Tsai, JH & Huang, TW 2019, A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. in 2019 IEEE MTT-S International Microwave Symposium, IMS 2019., 8700802, IEEE MTT-S International Microwave Symposium Digest, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 1283-1286, 2019 IEEE MTT-S International Microwave Symposium, IMS 2019, Boston, United States, 19/6/2.
Chiang KC, Tsai TC, Huang I, Tsai JH, Huang TW. A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 1283-1286. 8700802. (IEEE MTT-S International Microwave Symposium Digest).
Chiang, Kun Chan ; Tsai, Tsung Ching ; Huang, Ian ; Tsai, Jeng Han ; Huang, Tian Wei. / A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. 2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1283-1286 (IEEE MTT-S International Microwave Symposium Digest).
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abstract = "A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7{\%}. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.",
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