A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS

Kun Chan Chiang; Tsung Ching Tsai; Ian Huang; Jeng Han Tsai; Tian Wei Huang

A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS

Kun Chan Chiang, Tsung Ching Tsai, Ian Huang, Jeng Han Tsai, Tian Wei Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (P_sat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP_1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAE_peak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.

Original language	English
Title of host publication	2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1283-1286
Number of pages	4
ISBN (Electronic)	9781728113098
Publication status	Published - 2019 Jun
Event	2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States Duration: 2019 Jun 2 → 2019 Jun 7

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2019-June
ISSN (Print)	0149-645X

Conference

Conference	2019 IEEE MTT-S International Microwave Symposium, IMS 2019
Country/Territory	United States
City	Boston
Period	2019/06/02 → 2019/06/07

Keywords

5G mobile communication
CMOS integrated circuits
power amplifiers
transformers
power amplifier
28 GHz
60 GHz
V band
switch
5G
dual-band
SiGe
Ka band

ASJC Scopus subject areas

Condensed Matter Physics
Radiation
Electrical and Electronic Engineering

Cite this

Chiang, K. C., Tsai, T. C., Huang, I., Tsai, J. H., & Huang, T. W. (2019). A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. In 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 (pp. 1283-1286). [8700802] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc..

A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. / Chiang, Kun Chan; Tsai, Tsung Ching; Huang, Ian; Tsai, Jeng Han; Huang, Tian Wei.

2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1283-1286 8700802 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiang, KC, Tsai, TC, Huang, I, Tsai, JH & Huang, TW 2019, A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. in 2019 IEEE MTT-S International Microwave Symposium, IMS 2019., 8700802, IEEE MTT-S International Microwave Symposium Digest, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 1283-1286, 2019 IEEE MTT-S International Microwave Symposium, IMS 2019, Boston, United States, 2019/06/02.

Chiang, Kun Chan ; Tsai, Tsung Ching ; Huang, Ian ; Tsai, Jeng Han ; Huang, Tian Wei. / A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. 2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 1283-1286 (IEEE MTT-S International Microwave Symposium Digest).

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abstract = "A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.",

keywords = "5G mobile communication, CMOS integrated circuits, power amplifiers, transformers, power amplifier, 28 GHz, 60 GHz, V band, switch, 5G, dual-band, SiGe, Ka band",

author = "Chiang, {Kun Chan} and Tsai, {Tsung Ching} and Ian Huang and Tsai, {Jeng Han} and Huang, {Tian Wei}",

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AB - A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.

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A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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