@inproceedings{f66b02b49bdb49b49856bd407374414d,
title = "A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS",
abstract = "A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.",
keywords = "5G mobile communication, CMOS integrated circuits, power amplifiers, transformers, power amplifier, 28 GHz, 60 GHz, V band, switch, 5G, dual-band, SiGe, Ka band",
author = "Chiang, {Kun Chan} and Tsai, {Tsung Ching} and Ian Huang and Tsai, {Jeng Han} and Huang, {Tian Wei}",
year = "2019",
month = jun,
language = "English",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1283--1286",
booktitle = "2019 IEEE MTT-S International Microwave Symposium, IMS 2019",
note = "2019 IEEE MTT-S International Microwave Symposium, IMS 2019 ; Conference date: 02-06-2019 Through 07-06-2019",
}