Abstract
A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.
| Original language | English |
|---|---|
| Title of host publication | 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1283-1286 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781728113098 |
| Publication status | Published - 2019 Jun |
| Event | 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 - Boston, United States Duration: 2019 Jun 2 → 2019 Jun 7 |
Publication series
| Name | IEEE MTT-S International Microwave Symposium Digest |
|---|---|
| Volume | 2019-June |
| ISSN (Print) | 0149-645X |
Conference
| Conference | 2019 IEEE MTT-S International Microwave Symposium, IMS 2019 |
|---|---|
| Country | United States |
| City | Boston |
| Period | 19/6/2 → 19/6/7 |
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Keywords
- 5G mobile communication
- CMOS integrated circuits
- power amplifiers
- transformers
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS. / Chiang, Kun Chan; Tsai, Tsung Ching; Huang, Ian; Tsai, Jeng Han; Huang, Tian Wei.
2019 IEEE MTT-S International Microwave Symposium, IMS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 1283-1286 8700802 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2019-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - A 27-GHz Transformer Based Power Amplifier with 513.8-mW/mm Output Power Density and 40.7% Peak PAE in 1-V 28-nm CMOS
AU - Chiang, Kun Chan
AU - Tsai, Tsung Ching
AU - Huang, Ian
AU - Tsai, Jeng Han
AU - Huang, Tian Wei
PY - 2019/6
Y1 - 2019/6
N2 - A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.
AB - A fully integrated 27-GHz transformer based power amplifier with neutralization technique and low-loss transformer is proposed and fabricated in 28-nm CMOS technology. Several common-source cells are combined together as differential power cells. On-chip transformers and current-combining topology are used to combine amplifiers and reduce the problem of output power loss. Using an aluminium-pad (AP) layer on output matching reduces loss and can keep high PAE. In order to improve the overall stability, a neutralization structure is utilized in the combined cell. The measurement results demonstrate a small-signal gain of 13.1 dB, saturated power (Psat) of 17.9 dBm, output power density of 513.8-mW/mm, and output 1-dB compression point (OP1dB) of 14.7 dBm at 27 GHz. The peak power-added efficiency (PAEpeak) achieved by this power amplifier (PA) at 27 GHz is 40.7%. The core size of the chip is 0.12 mm. To the best of authors' knowledge, this circuit presents a superior power and efficiency performance compared with reported Ka-band common-source CMOS PAs.
KW - 5G mobile communication
KW - CMOS integrated circuits
KW - power amplifiers
KW - transformers
UR - http://www.scopus.com/inward/record.url?scp=85069953993&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069953993&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85069953993
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 1283
EP - 1286
BT - 2019 IEEE MTT-S International Microwave Symposium, IMS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
ER -