Abstract
A 27-42-GHz 5-bit passive switching phase shifter is presented using 65-nm CMOS technology for the fifth generation (5G) applications. In the 180° phase shift bit, a reflection-type-based biphase modulator topology is developed to achieve good phase shifting performance over a wide bandwidth. The measured insertion loss (IL) of all 32 states is 12.4 ± 1.2 dB at 39 GHz and 11.4 ± 2.3 dB at 28 GHz with zero dc power. The phase shifter demonstrates an ultralow root mean square (rms) phase error of 0.7° and a low rms amplitude error of 0.8 dB at 37 GHz with an inherent digital phase-control mechanism. The rms phase error is less than 3.8° and the rms amplitude error is less than 2.1 dB from 27 to 42 GHz.
Original language | English |
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Article number | 9162078 |
Pages (from-to) | 900-903 |
Number of pages | 4 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 30 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2020 Sept |
Keywords
- CMOS
- Ka-band
- millimeter-wave (mm-wave)
- phase shifter
- phased-array
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering