A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Jeng Han Tsai; Pei Si Wu; Chin Shen Lin; Tian Wei Huang; John G.J. Chern; Wen Chu Huang

doi:10.1109/LMWC.2007.892934

A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Jeng Han Tsai^*
, Pei Si Wu
, Chin Shen Lin
, Tian Wei Huang
, John G.J. Chern
, Wen Chu Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

88 Citations (Scopus)

Abstract

A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm². The OP_{1 dB} of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

Original language	English
Pages (from-to)	247-249
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	17
Issue number	4
DOIs	https://doi.org/10.1109/LMWC.2007.892934
Publication status	Published - 2007 Apr
Externally published	Yes

Keywords

CMOS
Gilbert-cell
Millimeter-wave (MMW)
Mixer
Monolithic microwave integrated circuit (MMIC)

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2007.892934

Cite this

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title = "A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology",

abstract = "A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.",

keywords = "CMOS, Gilbert-cell, Millimeter-wave (MMW), Mixer, Monolithic microwave integrated circuit (MMIC)",

author = "Tsai, \{Jeng Han\} and Wu, \{Pei Si\} and Lin, \{Chin Shen\} and Huang, \{Tian Wei\} and Chern, \{John G.J.\} and Huang, \{Wen Chu\}",

note = "Funding Information: Manuscript received July 23, 2006; revised December 6, 2006. This work was supported in part by NTU-TSMC Joint-Development Project and the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, and NSC 93-2752-E-002-003-PAE.",

year = "2007",

month = apr,

doi = "10.1109/LMWC.2007.892934",

language = "English",

volume = "17",

pages = "247--249",

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AU - Tsai, Jeng Han

AU - Wu, Pei Si

AU - Lin, Chin Shen

AU - Huang, Tian Wei

AU - Chern, John G.J.

AU - Huang, Wen Chu

N1 - Funding Information: Manuscript received July 23, 2006; revised December 6, 2006. This work was supported in part by NTU-TSMC Joint-Development Project and the National Science Council of Taiwan, R.O.C., under Grants NSC 95-2219-E-002-011, NSC 95-2221-E-002-084-MY2, and NSC 93-2752-E-002-003-PAE.

PY - 2007/4

Y1 - 2007/4

N2 - A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

AB - A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

KW - CMOS

KW - Gilbert-cell

KW - Millimeter-wave (MMW)

KW - Mixer

KW - Monolithic microwave integrated circuit (MMIC)

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A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

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Keywords

ASJC Scopus subject areas

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