A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

Jeng-Han Tsai, Pei Si Wu, Chin Shen Lin, Tian Wei Huang, John G.J. Chern, Wen Chu Huang

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

Original languageEnglish
Pages (from-to)247-249
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1

Fingerprint

CMOS
broadband
Mixer circuits
Monolithic microwave integrated circuits
Ladders
Transconductance
cells
radio frequencies
Bandwidth
microwave circuits
transconductance
flatness
ladders
integrated circuits
chips
impedance
bandwidth

Keywords

  • CMOS
  • Gilbert-cell
  • Millimeter-wave (MMW)
  • Mixer
  • Monolithic microwave integrated circuit (MMIC)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology. / Tsai, Jeng-Han; Wu, Pei Si; Lin, Chin Shen; Huang, Tian Wei; Chern, John G.J.; Huang, Wen Chu.

In: IEEE Microwave and Wireless Components Letters, Vol. 17, No. 4, 01.04.2007, p. 247-249.

Research output: Contribution to journalArticle

Tsai, Jeng-Han ; Wu, Pei Si ; Lin, Chin Shen ; Huang, Tian Wei ; Chern, John G.J. ; Huang, Wen Chu. / A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology. In: IEEE Microwave and Wireless Components Letters. 2007 ; Vol. 17, No. 4. pp. 247-249.
@article{25dfa30914df4f668d7844f1add4577d,
title = "A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology",
abstract = "A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.",
keywords = "CMOS, Gilbert-cell, Millimeter-wave (MMW), Mixer, Monolithic microwave integrated circuit (MMIC)",
author = "Jeng-Han Tsai and Wu, {Pei Si} and Lin, {Chin Shen} and Huang, {Tian Wei} and Chern, {John G.J.} and Huang, {Wen Chu}",
year = "2007",
month = "4",
day = "1",
doi = "10.1109/LMWC.2007.892934",
language = "English",
volume = "17",
pages = "247--249",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

AU - Tsai, Jeng-Han

AU - Wu, Pei Si

AU - Lin, Chin Shen

AU - Huang, Tian Wei

AU - Chern, John G.J.

AU - Huang, Wen Chu

PY - 2007/4/1

Y1 - 2007/4/1

N2 - A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

AB - A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3 ± 2 dB measured conversion gain (to 50-Ω load) from 25 to 75 GHz with a compact chip size of 0.30 mm2. The OP1 dB of the mixer is 1 dBm and - 4 dBm at 40 and 60 GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to date.

KW - CMOS

KW - Gilbert-cell

KW - Millimeter-wave (MMW)

KW - Mixer

KW - Monolithic microwave integrated circuit (MMIC)

UR - http://www.scopus.com/inward/record.url?scp=34047187967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047187967&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2007.892934

DO - 10.1109/LMWC.2007.892934

M3 - Article

AN - SCOPUS:34047187967

VL - 17

SP - 247

EP - 249

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 4

ER -