A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Hamed Alsuraisry; Jen Hao Cheng; Shih Jyun Luo; Wen Jie Lin; Jeng Han Tsai; Tian Wei Huang

doi:10.1109/APMC.2015.7413434

A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Hamed Alsuraisry, Jen Hao Cheng, Shih Jyun Luo, Wen Jie Lin, Jeng Han Tsai, Tian Wei Huang

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP_1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm², including all the dc and RF pads.

Original language	English
Title of host publication	2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
Editors	Fan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479987658
DOIs	https://doi.org/10.1109/APMC.2015.7413434
Publication status	Published - 2015
Event	2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, China Duration: 2015 Dec 6 → 2015 Dec 9

Publication series

Name	Asia-Pacific Microwave Conference Proceedings, APMC
Volume	3

Other

Other	2015 Asia-Pacific Microwave Conference, APMC 2015
Country/Territory	China
City	Nanjing
Period	2015/12/06 → 2015/12/09

Keywords

CMOS
Power amplifier (PA)
stacked-FET

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APMC.2015.7413434

Cite this

Alsuraisry, H., Cheng, J. H., Luo, S. J., Lin, W. J., Tsai, J. H., & Huang, T. W. (2015). A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. In F. Meng, W. Hong, G.-Q. Yang, Z. Song, & X.-W. Zhu (Eds.), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015 Article 7413434 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2015.7413434

A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. / Alsuraisry, Hamed; Cheng, Jen Hao; Luo, Shih Jyun et al.
2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. ed. / Fan Meng; Wei Hong; Guang-Qi Yang; Zhe Song; Xiao-Wei Zhu. Institute of Electrical and Electronics Engineers Inc., 2015. 7413434 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Alsuraisry, H, Cheng, JH, Luo, SJ, Lin, WJ, Tsai, JH & Huang, TW 2015, A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. in F Meng, W Hong, G-Q Yang, Z Song & X-W Zhu (eds), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015., 7413434, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 3, Institute of Electrical and Electronics Engineers Inc., 2015 Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 2015/12/06. https://doi.org/10.1109/APMC.2015.7413434

Alsuraisry H, Cheng JH, Luo SJ, Lin WJ, Tsai JH, Huang TW. A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. In Meng F, Hong W, Yang GQ, Song Z, Zhu XW, editors, 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7413434. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC.2015.7413434

Alsuraisry, Hamed ; Cheng, Jen Hao ; Luo, Shih Jyun et al. / A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. editor / Fan Meng ; Wei Hong ; Guang-Qi Yang ; Zhe Song ; Xiao-Wei Zhu. Institute of Electrical and Electronics Engineers Inc., 2015. (Asia-Pacific Microwave Conference Proceedings, APMC).

@inproceedings{dcbb65e642504f0c8f179cfb067a5c4c,

title = "A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology",

abstract = "A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.",

keywords = "CMOS, Power amplifier (PA), stacked-FET",

author = "Hamed Alsuraisry and Cheng, {Jen Hao} and Luo, {Shih Jyun} and Lin, {Wen Jie} and Tsai, {Jeng Han} and Huang, {Tian Wei}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 Asia-Pacific Microwave Conference, APMC 2015 ; Conference date: 06-12-2015 Through 09-12-2015",

year = "2015",

doi = "10.1109/APMC.2015.7413434",

language = "English",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Fan Meng and Wei Hong and Guang-Qi Yang and Zhe Song and Xiao-Wei Zhu",

booktitle = "2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015",

}

TY - GEN

T1 - A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

AU - Alsuraisry, Hamed

AU - Cheng, Jen Hao

AU - Luo, Shih Jyun

AU - Lin, Wen Jie

AU - Tsai, Jeng Han

AU - Huang, Tian Wei

PY - 2015

Y1 - 2015

N2 - A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

AB - A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

KW - CMOS

KW - Power amplifier (PA)

KW - stacked-FET

UR - http://www.scopus.com/inward/record.url?scp=84979074524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84979074524&partnerID=8YFLogxK

U2 - 10.1109/APMC.2015.7413434

DO - 10.1109/APMC.2015.7413434

M3 - Conference contribution

AN - SCOPUS:84979074524

T3 - Asia-Pacific Microwave Conference Proceedings, APMC

BT - 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015

A2 - Meng, Fan

A2 - Hong, Wei

A2 - Yang, Guang-Qi

A2 - Song, Zhe

A2 - Zhu, Xiao-Wei

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 Asia-Pacific Microwave Conference, APMC 2015

Y2 - 6 December 2015 through 9 December 2015

ER -

A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Abstract

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Keywords

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