A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Hamed Alsuraisry, Jen Hao Cheng, Shih Jyun Luo, Wen Jie Lin, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

Original languageEnglish
Title of host publication2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
EditorsFan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479987658
DOIs
Publication statusPublished - 2015 Jan 1
Event2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, China
Duration: 2015 Dec 62015 Dec 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume3

Other

Other2015 Asia-Pacific Microwave Conference, APMC 2015
CountryChina
CityNanjing
Period15/12/615/12/9

Keywords

  • CMOS
  • Power amplifier (PA)
  • stacked-FET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Alsuraisry, H., Cheng, J. H., Luo, S. J., Lin, W. J., Tsai, J. H., & Huang, T. W. (2015). A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. In F. Meng, W. Hong, G-Q. Yang, Z. Song, & X-W. Zhu (Eds.), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015 [7413434] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2015.7413434