A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Hamed Alsuraisry, Jen Hao Cheng, Shih Jyun Luo, Wen Jie Lin, Jeng Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

Original languageEnglish
Title of host publication2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
EditorsFan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479987658
DOIs
Publication statusPublished - 2015
Event2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, China
Duration: 2015 Dec 62015 Dec 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume3

Other

Other2015 Asia-Pacific Microwave Conference, APMC 2015
Country/TerritoryChina
CityNanjing
Period2015/12/062015/12/09

Keywords

  • CMOS
  • Power amplifier (PA)
  • stacked-FET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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