A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology

Hamed Alsuraisry, Jen Hao Cheng, Shih Jyun Luo, Wen Jie Lin, Jeng-Han Tsai, Tian Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP1dB) of 18.9 dBm with peak power-Added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm2, including all the dc and RF pads.

Original languageEnglish
Title of host publication2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015
EditorsFan Meng, Wei Hong, Guang-Qi Yang, Zhe Song, Xiao-Wei Zhu
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479987658
DOIs
Publication statusPublished - 2015 Jan 1
Event2015 Asia-Pacific Microwave Conference, APMC 2015 - Nanjing, China
Duration: 2015 Dec 62015 Dec 9

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC
Volume3

Other

Other2015 Asia-Pacific Microwave Conference, APMC 2015
CountryChina
CityNanjing
Period15/12/615/12/9

Fingerprint

Field effect transistors
Power amplifiers
Electric breakdown
Transistors
Electric potential

Keywords

  • CMOS
  • Power amplifier (PA)
  • stacked-FET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Alsuraisry, H., Cheng, J. H., Luo, S. J., Lin, W. J., Tsai, J-H., & Huang, T. W. (2015). A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. In F. Meng, W. Hong, G-Q. Yang, Z. Song, & X-W. Zhu (Eds.), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015 [7413434] (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APMC.2015.7413434

A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. / Alsuraisry, Hamed; Cheng, Jen Hao; Luo, Shih Jyun; Lin, Wen Jie; Tsai, Jeng-Han; Huang, Tian Wei.

2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. ed. / Fan Meng; Wei Hong; Guang-Qi Yang; Zhe Song; Xiao-Wei Zhu. Institute of Electrical and Electronics Engineers Inc., 2015. 7413434 (Asia-Pacific Microwave Conference Proceedings, APMC; Vol. 3).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alsuraisry, H, Cheng, JH, Luo, SJ, Lin, WJ, Tsai, J-H & Huang, TW 2015, A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. in F Meng, W Hong, G-Q Yang, Z Song & X-W Zhu (eds), 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015., 7413434, Asia-Pacific Microwave Conference Proceedings, APMC, vol. 3, Institute of Electrical and Electronics Engineers Inc., 2015 Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 15/12/6. https://doi.org/10.1109/APMC.2015.7413434
Alsuraisry H, Cheng JH, Luo SJ, Lin WJ, Tsai J-H, Huang TW. A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. In Meng F, Hong W, Yang G-Q, Song Z, Zhu X-W, editors, 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7413434. (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2015.7413434
Alsuraisry, Hamed ; Cheng, Jen Hao ; Luo, Shih Jyun ; Lin, Wen Jie ; Tsai, Jeng-Han ; Huang, Tian Wei. / A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology. 2015 Asia-Pacific Microwave Conference Proceedings, APMC 2015. editor / Fan Meng ; Wei Hong ; Guang-Qi Yang ; Zhe Song ; Xiao-Wei Zhu. Institute of Electrical and Electronics Engineers Inc., 2015. (Asia-Pacific Microwave Conference Proceedings, APMC).
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