A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process

Chieh Wei Wang; Yu Chun Chen; Wen Jie Lin; Jeng Han Tsai; Tian Wei Huang

doi:10.1109/IMS30576.2020.9223905

A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process

Chieh Wei Wang, Yu Chun Chen, Wen Jie Lin, Jeng Han Tsai^*, Tian Wei Huang

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

16 Citations (Scopus)

Abstract

This paper presents a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands with only 39.6-mW quiescent power consumption. The measured Psat is 16.1-dBm at 30 GHz with over 50% Psat output power 1dB bandwidth (BW1\dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1\dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc.

Original language	English
Title of host publication	IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1323-1326
Number of pages	4
ISBN (Electronic)	9781728168159
DOIs	https://doi.org/10.1109/IMS30576.2020.9223905
Publication status	Published - 2020 Aug
Event	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States Duration: 2020 Aug 4 → 2020 Aug 6

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2020-August
ISSN (Print)	0149-645X

Conference

Conference	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/Territory	United States
City	Virtual, Los Angeles
Period	2020/08/04 → 2020/08/06

Keywords

5G mobile communication
CMOS integrated circuits
Power amplifier
Transformer
Wideband

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/IMS30576.2020.9223905

Cite this

Wang, C. W., Chen, Y. C., Lin, W. J., Tsai, J. H., & Huang, T. W. (2020). A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium (pp. 1323-1326). Article 9223905 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS30576.2020.9223905

A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process. / Wang, Chieh Wei; Chen, Yu Chun; Lin, Wen Jie et al.
IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc., 2020. p. 1323-1326 9223905 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, CW, Chen, YC, Lin, WJ, Tsai, JH & Huang, TW 2020, A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process. in IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium., 9223905, IEEE MTT-S International Microwave Symposium Digest, vol. 2020-August, Institute of Electrical and Electronics Engineers Inc., pp. 1323-1326, 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020, Virtual, Los Angeles, United States, 2020/08/04. https://doi.org/10.1109/IMS30576.2020.9223905

Wang CW, Chen YC, Lin WJ, Tsai JH, Huang TW. A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc. 2020. p. 1323-1326. 9223905. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/IMS30576.2020.9223905

@inproceedings{df3e54969e9c458594e415e8972fbf05,

title = "A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process",

abstract = "This paper presents a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands with only 39.6-mW quiescent power consumption. The measured Psat is 16.1-dBm at 30 GHz with over 50% Psat output power 1dB bandwidth (BW1\dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1\dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc.",

keywords = "5G mobile communication, CMOS integrated circuits, Power amplifier, Transformer, Wideband",

author = "Wang, {Chieh Wei} and Chen, {Yu Chun} and Lin, {Wen Jie} and Tsai, {Jeng Han} and Huang, {Tian Wei}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 ; Conference date: 04-08-2020 Through 06-08-2020",

year = "2020",

month = aug,

doi = "10.1109/IMS30576.2020.9223905",

language = "English",

series = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1323--1326",

booktitle = "IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium",

}

TY - GEN

T1 - A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process

AU - Wang, Chieh Wei

AU - Chen, Yu Chun

AU - Lin, Wen Jie

AU - Tsai, Jeng Han

AU - Huang, Tian Wei

PY - 2020/8

Y1 - 2020/8

N2 - This paper presents a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands with only 39.6-mW quiescent power consumption. The measured Psat is 16.1-dBm at 30 GHz with over 50% Psat output power 1dB bandwidth (BW1\dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1\dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc.

AB - This paper presents a wideband transformer-based power amplifier applicable for the millimeter-wave (MMW) fifth generation (5G) mobile communication. The proposed power amplifier is manufactured in 28-nm HPC-plus CMOS process. The power stage and driver stage amplifiers are biased in deep class-AB to reduce the dc power dissipation in the linear power region and provide a linear operation close to the saturated output power (PSAT) of the PA. In the output matching network, a transformer with two coupled resonant capacitors is designed for broadband power matching. The proposed PA achieves the peak small-signal power gain (Gp) of 20.4-dB at 23 GHz and a measured 3dB small-signal gain bandwidth (BW3dB) from 20.8 to 41.6 GHz covering the multiple 5G bands with only 39.6-mW quiescent power consumption. The measured Psat is 16.1-dBm at 30 GHz with over 50% Psat output power 1dB bandwidth (BW1\dB) from 23 to 38.5-GHz. Also, this PA reports a 35% peak power added efficiency (PAEMAX) at 25 GHz and a 13-dBm peak OP1\dB at 41 GHz. In the 64-QAM OFDM modulated signal measurement, this power amplifier obtains an output power of 7.2/6.9-dBm and a modulated PAE of 8.5%/8.8% at 23 and 41-GHz respectively when keeping the EVM below -25 dBc.

KW - 5G mobile communication

KW - CMOS integrated circuits

KW - Power amplifier

KW - Transformer

KW - Wideband

UR - http://www.scopus.com/inward/record.url?scp=85094216077&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85094216077&partnerID=8YFLogxK

U2 - 10.1109/IMS30576.2020.9223905

DO - 10.1109/IMS30576.2020.9223905

M3 - Conference contribution

AN - SCOPUS:85094216077

T3 - IEEE MTT-S International Microwave Symposium Digest

SP - 1323

EP - 1326

BT - IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020

Y2 - 4 August 2020 through 6 August 2020

ER -

A 20.8-41.6-GHz Transformer-Based Wideband Power Amplifier with 20.4-dB Peak Gain Using 0.9-V 28-nm CMOS Process

Abstract

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Keywords

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