A 20 to 24 GHz + 16.8 dBm fully integrated power amplifier using 0.18 μm CMOS process

Yung Nien Jen, Jeng-Han Tsai, Chung Te Peng, Tian Wei Huang

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

A 2024 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 μm standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 W/mm 2, which is the smallest one compared to all reported paper.

Original languageEnglish
Article number4729652
Pages (from-to)42-44
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume19
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

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power amplifiers
Power amplifiers
CMOS
chips
radiant flux density
output
power efficiency
saturation

Keywords

  • 24 GHz
  • CMOS
  • Fully integrated
  • Power amplifier (PA)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A 20 to 24 GHz + 16.8 dBm fully integrated power amplifier using 0.18 μm CMOS process. / Jen, Yung Nien; Tsai, Jeng-Han; Peng, Chung Te; Huang, Tian Wei.

In: IEEE Microwave and Wireless Components Letters, Vol. 19, No. 1, 4729652, 01.01.2009, p. 42-44.

Research output: Contribution to journalArticle

@article{fc71d44e17e441c587b24d320e807e14,
title = "A 20 to 24 GHz + 16.8 dBm fully integrated power amplifier using 0.18 μm CMOS process",
abstract = "A 2024 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 μm standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7{\%} power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 W/mm 2, which is the smallest one compared to all reported paper.",
keywords = "24 GHz, CMOS, Fully integrated, Power amplifier (PA)",
author = "Jen, {Yung Nien} and Jeng-Han Tsai and Peng, {Chung Te} and Huang, {Tian Wei}",
year = "2009",
month = "1",
day = "1",
doi = "10.1109/LMWC.2008.2008591",
language = "English",
volume = "19",
pages = "42--44",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - A 20 to 24 GHz + 16.8 dBm fully integrated power amplifier using 0.18 μm CMOS process

AU - Jen, Yung Nien

AU - Tsai, Jeng-Han

AU - Peng, Chung Te

AU - Huang, Tian Wei

PY - 2009/1/1

Y1 - 2009/1/1

N2 - A 2024 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 μm standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 W/mm 2, which is the smallest one compared to all reported paper.

AB - A 2024 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 μm standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 W/mm 2, which is the smallest one compared to all reported paper.

KW - 24 GHz

KW - CMOS

KW - Fully integrated

KW - Power amplifier (PA)

UR - http://www.scopus.com/inward/record.url?scp=58149498298&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149498298&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2008.2008591

DO - 10.1109/LMWC.2008.2008591

M3 - Article

AN - SCOPUS:58149498298

VL - 19

SP - 42

EP - 44

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 1

M1 - 4729652

ER -