A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process

Yu Cheng Liu, Yi Wei Chang, Ya Che Yeh, Shou Hsien Weng, Jeng Han Tsai, Hong Yeh Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 μm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad RF bandwidth with good radio frequency (RF) and local oscillation (LO) input return losses. A hybrid NMOS-HBT Darlington cell is utilized in the mixer gain cell design to extend RF bandwidth with low LO driving power as compared to the conventional distributed drain mixer. The proposed mixer exhibits a broad RF factional bandwidth of 188.4%, a maximum conversion gain of 5 dB, a LO power of 0 dBm, and a compact chip size of 0.76 × 0.55 mm2. The total dc power consumption is 17.5 mW.

Original languageEnglish
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
Publication statusPublished - 2016 Aug 9
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: 2016 May 222016 May 27

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
CountryUnited States
CitySan Francisco
Period16/5/2216/5/27

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
Mixer circuits
heterojunctions
CMOS
radio frequencies
broadband
oscillations
Metals
bandwidth
Bandwidth
cells
Electric power utilization
topology
chips
Topology
Oxide semiconductors

Keywords

  • BiCMOS
  • CMOS
  • Darlington
  • distributed mixer
  • microwave and millimeter-wave (MMW)
  • SiGe

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Liu, Y. C., Chang, Y. W., Yeh, Y. C., Weng, S. H., Tsai, J. H., & Chang, H. Y. (2016). A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 [7540371] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2016.7540371

A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process. / Liu, Yu Cheng; Chang, Yi Wei; Yeh, Ya Che; Weng, Shou Hsien; Tsai, Jeng Han; Chang, Hong Yeh.

2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7540371 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, YC, Chang, YW, Yeh, YC, Weng, SH, Tsai, JH & Chang, HY 2016, A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process. in 2016 IEEE MTT-S International Microwave Symposium, IMS 2016., 7540371, IEEE MTT-S International Microwave Symposium Digest, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE MTT-S International Microwave Symposium, IMS 2016, San Francisco, United States, 16/5/22. https://doi.org/10.1109/MWSYM.2016.7540371
Liu YC, Chang YW, Yeh YC, Weng SH, Tsai JH, Chang HY. A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7540371. (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2016.7540371
Liu, Yu Cheng ; Chang, Yi Wei ; Yeh, Ya Che ; Weng, Shou Hsien ; Tsai, Jeng Han ; Chang, Hong Yeh. / A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process. 2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (IEEE MTT-S International Microwave Symposium Digest).
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title = "A 2-to-67 GHz 0-dBm LO power broadband distributed NMOS-HBT Darlington mixer in 0.18 μm SiGe process",
abstract = "A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 μm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad RF bandwidth with good radio frequency (RF) and local oscillation (LO) input return losses. A hybrid NMOS-HBT Darlington cell is utilized in the mixer gain cell design to extend RF bandwidth with low LO driving power as compared to the conventional distributed drain mixer. The proposed mixer exhibits a broad RF factional bandwidth of 188.4{\%}, a maximum conversion gain of 5 dB, a LO power of 0 dBm, and a compact chip size of 0.76 × 0.55 mm2. The total dc power consumption is 17.5 mW.",
keywords = "BiCMOS, CMOS, Darlington, distributed mixer, microwave and millimeter-wave (MMW), SiGe",
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AU - Tsai, Jeng Han

AU - Chang, Hong Yeh

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N2 - A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 μm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad RF bandwidth with good radio frequency (RF) and local oscillation (LO) input return losses. A hybrid NMOS-HBT Darlington cell is utilized in the mixer gain cell design to extend RF bandwidth with low LO driving power as compared to the conventional distributed drain mixer. The proposed mixer exhibits a broad RF factional bandwidth of 188.4%, a maximum conversion gain of 5 dB, a LO power of 0 dBm, and a compact chip size of 0.76 × 0.55 mm2. The total dc power consumption is 17.5 mW.

AB - A 2-to-67 GHz distributed N-type complementary metal oxide semiconductor (NMOS)-heterojunction bipolar transistor (HBT) Darlington mixer using 0.18 μm SiGe BiCMOS process is presented in this paper. A distributed topology is adopted to achieve broad RF bandwidth with good radio frequency (RF) and local oscillation (LO) input return losses. A hybrid NMOS-HBT Darlington cell is utilized in the mixer gain cell design to extend RF bandwidth with low LO driving power as compared to the conventional distributed drain mixer. The proposed mixer exhibits a broad RF factional bandwidth of 188.4%, a maximum conversion gain of 5 dB, a LO power of 0 dBm, and a compact chip size of 0.76 × 0.55 mm2. The total dc power consumption is 17.5 mW.

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