Abstract
This letter presents an ultrabroadband power amplifier (PA) with AM-phase modulation (PM) linearizer in a 28-nm bulk CMOS process for 5G millimeter-wave (mm-Wave) mobile communications. To enable the 5G mm-Wave multigigahertz broadband, a pMOS linearizer in power stage is introduced to achieve broadband AM-PM linearization. The proposed linearized PA achieves a 3-dB gain bandwidth (BW) from 19.7 to 38.9 GHz (65.5%) covering multiple 5G bands. The measured OP1 dB is 12.7 dB ± 0.6 dB from 22 to 38 GHz, and the PAE is larger than 25% from 21 to 36 GHz (50%). For 100-MHz 64-quadratic-amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM) signal, this PA obtains a linear output power of 8.5 dBm/8.3 dBm/8.8 dBm under error vector magnitude (EVM) of -25 dB with modulated PAE of 11.0%/11.0%/11.9% at 23 GHz/28 GHz/38 GHz, respectively. Moreover, the measured back-off power from OP1 dB to linear output power is 4.7 dB/3.9 dB/3.7 dB at 23 GHz/28 GHz/38 GHz.
Original language | English |
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Pages (from-to) | 327-330 |
Number of pages | 4 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 32 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2022 Apr 1 |
Keywords
- 5G mobile
- CMOS
- broadband
- linearizer
- millimeter-wave (mm-Wave)
- power amplifier (PA)
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering